Elemental and Crystallographic Analysis of Trapiche Ruby using Micro X-ray Fluorescence Spectroscopy, X-ray Pole Figure Map, and Low Vacuum Type Field Emission Scanning Electron Microscopy Reviewed

Junji Yamanaka, Keisuke Arimoto, Takuma Ampo, Yasushi Takahashi

MICROSCOPY AND MICROANALYSIS   29 ( S1 )   2011 - 2013   2023.7( ISSN：1431-9276 )

新規太陽電池材料BaSi2の近接蒸着による成膜技術開発 Reviewed

原 康祐、山中 淳二、有元 圭介

表面と真空   2433-5835   388 - 392   2023.7( ISSN：2433-5835 )

Influences of lattice strain and SiGe buffer layer thickness on electrical characteristics of strained Si/SiGe/Si(110) heterostructures Reviewed Major achievement

Taisuke Fujisawa, Atsushi Onogawa, Miki Horiuchi, Yuichi Sano, Chihiro Sakata, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa, Keisuke Arimoto

Materials Science in Semiconductor Processing   161   107476 - 107476   2023.7( ISSN：1369-8001 )

Crystalline Morphology of SiGe Films Grown on Si(110) Substrates Reviewed Major achievement

Keisuke Arimoto, Chihiro Sakata, Kosuke O. Hara, Junji Yamanaka

Journal of Electronic Materials   52   5121 - 5127   2023.4

Semiconducting BaSi2 film synthesis by close-spaced evaporation benefiting from mechanical activation of source powder by ball milling Reviewed

Kosuke O. Hara, Chiaya Yamamoto, Junji Yamanaka, and Keisuke Arimoto

JJAP Conference Proceedings   10   011101   2023.4( ISSN：2758-2450 )

Constructing the composition ratio prediction model using machine learning for BaSi2 thin films deposited by thermal evaporation Reviewed Major achievement

Ryuto Ueda, Keisuke Arimoto, Junji Yamanaka, and Kosuke O. Hara

Japanese Journal of Applied Physics   62   SK1011   2023.4( ISSN：1347-4065 )

Evaluation of Lattice-Spacing of SiGe/Si by NBD using Two-condenser-lens TEM Reviewed

Junji Yamanaka, Takuya Oguni, Yuichi Sano, Yusuke Ohshima, Atsushi Onogawa, Kosuke O. Hara, Keisuke Arimoto

MICROSCOPY AND MICROANALYSIS   28 ( S1 )   2812 - 2813   2022.7( ISSN：1431-9276 )

Low temperature synthesis of photoconductive BaSi2 films via mechanochemically assisted close-spaced evaporation Reviewed

Mater. Adv.   2   6713 - 6721   2021.9( ISSN：2633-5409 )

Discrimination between Coherent and Incoherent Interfaces using STEM Moiré Reviewed

Junji Yamanaka, Daisuke Izumi, Chiaya Yamamoto, Mai Shirakura, Kosuke Hara, Keisuke Arimoto

MICROSCOPY AND MICROANALYSIS   27   2326 - 2327   2021.8( ISSN：1431-9276 )

Dependences of the hole mobility in the strained Si pMOSFET and gated Hall bars formed on SiGe/Si(110) on the channel direction and the strained Si thickness Reviewed Major achievement

JOURNAL OF CRYSTAL GROWTH   571   126246   2021.7( ISSN：0022-0248 )

Investigations on Ba diffusion and SiO evaporation during BaSi2 film formation on Si substrates by thermal evaporation Reviewed

Daisuke Yazawa, Kosuke O. Hara, Junji Yamanaka, Keisuke Arimoto

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   39   043410   2021.5( ISSN：0734-2101 )

Close-spaced evaporation of CaGe2 films for scalable GeH film formation Reviewed

Kosuke O. Hara, Shin Kunieda, Junji Yamanaka, Keisuke Arimoto, Mai Itoh, Masashi Kurosawa

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   132   105928   2021.5( ISSN：1369-8001 )

Engineering Strain, Defects, and Electronic Properties of (110)-Oriented Strained Si Major achievement

K. Arimoto, J. Yamanaka, K. O. Hara, K. Sawano, N. Usami and K. Nakagawa

ECS Transactions   98 ( 5 )   277 - 290   2020.10( ISSN：1938-5862 )

Interface reaction of the SnS/BaSi2 heterojunction fabricated for solar cell applications Reviewed

Kosuke O. Hara, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa

THIN SOLID FILMS   706   138064   2020.7( ISSN：0040-6090 )

HREM Observation and Identification of the Causality of Twins in SiGe/Si (110) Reviewed

Junji Yamanaka, Yuichi Sano, Shingo Saito, Atsushi Onogawa, Kosuke Hara, Kiyokazu Nakagawa, Keisuke Arimoto

MICROSCOPY AND MICROANALYSIS   26   286   2020.7( ISSN：1431-9276 )

Hole mobility in Strained Si/Relaxed SiGe/Si(110) hetero structures studied by gated Hall measurements Reviewed Major achievement

Daichi Namiuchi, Atsushi Onogawa, Taisuke Fujisawa, Yuichi Sano, Daisuke Izumi, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa, Keisuke Arimoto

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   113   105052   2020.3( ISSN：1369-8001 )

Reactive deposition growth of highly (001)-oriented BaSi2 films by close-spaced evaporation Reviewed

Kosuke O. Hara, Shuhei Takizawa, Junji Yamanaka, Noritaka Usami, Keisuke Arimoto

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   113   105044   2020.3( ISSN：1369-8001 )

Strain relaxation process and evolution of crystalline morphologies during the growths of SiGe on Si(110) by solid-source molecular beam epitaxy Reviewed Major achievement

Shingo Saito, Yuichi Sano, Takane Yamada, Kosuke O. Hara, Junji Yamanaka, Kiyokazu Nakagawa, Keisuke Arimoto

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   113   105042   2020.3( ISSN：1369-8001 )

Hole mobility enhancement observed in (110)-oriented strained Si Reviewed Major achievement

Keisuke Arimoto , Naoto Utsuyama, Shohei Mitsui, Kei Satoh, Takane Yamada, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa

JAPANESE JOURNAL OF APPLIED PHYSICS   59   SGGK06   2020.2( ISSN：0021-4922 )

Thermodynamic analyses of thermal evaporation of BaSi2 Reviewed

Kosuke O. Hara, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa

JAPANESE JOURNAL OF APPLIED PHYSICS   59   SFFA02   2020.2( ISSN：0021-4922 )

Relaxation of strain in Si layers formed on (110)-oriented SiGe/Si heterostructures Reviewed Major achievement

Keisuke Arimoto, Atsushi Onogawa, Shingo Saito, Yuichi Sano, Daisuke Izumi, Junji Yamanaka, Kosuke O. Hara, Kiyokazu Nakagawa

ECS Transactions   93 ( 1 )   79 - 80   2019.11( ISSN：1938-5862 )

Evaluation of Crystal Lattice Rotation around a Stress-Induced Twin in a Step-Graded SiGe / Si (110) Using STEM Moiré Observation and its Image Analysis Reviewed

Junji Yamanaka, Chiaya Yamamoto, Mai Shirakura, Kosuke O. Hara, Keisuke Arimoto, Kiyokazu Nakagawa, Akimitsu Ishizuka, Kazuo Ishizuka

MICROSCOPY AND MICROANALYSIS   25   242 - 243   2019.8( ISSN：1431-9276 )

Fabrication of SnS/BaSi2 heterojunction by thermal evaporation for solar cell applications Reviewed

Kosuke O. Hara, Keisuke Arimoto, Junji Yamanaka, and Kiyokazu Nakagawa

JAPANESE JOURNAL OF APPLIED PHYSICS   58   SBBF01   2019( ISSN：0021-4922 )

Diffusion process in BaSi2 film formation by thermal evaporation and its relation to electrical properties Reviewed

Kosuke O. Hara, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa

JOURNAL OF MATERIALS RESEARCH   33   2297 - 2305   2018.8( ISSN：0884-2914 )

Hole generation associated with intrinsic defects in SOI-based SiGe thin films formed by solid-source molecular beam epitaxy Reviewed

Motoki Satoh, Keisuke Arimoto, Junji Yamanaka, Kentarou Sawano, Yasuhiro Shiraki, Kiyokazu Nakagawa

JOURNAL OF APPLIED PHYSICS   123   161529   2018.4( ISSN：0021-8979 )

BaSi2 formation mechanism in thermally evaporated films and its application to reducing oxygen impurity concentration Reviewed

Kosuke O. Hara, Chiaya Yamamoto, Junji Yamanaka, Keisuke Arimoto, Kiyokazu Nakagawa, Noritaka Usami

JAPANESE JOURNAL OF APPLIED PHYSICS   57   04FS01   2018.2( ISSN：0021-4922 )

Stability of strain in Si layers formed on SiGe/Si(110) heterostructures Reviewed Major achievement

Keisuke Arimoto, Atsushi Onogawa, Shingo Saito, Takane Yamada, Kei Sato, Naoto Utsuyama, Yuichi Sano, Daisuke Izumi, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa

SEMICONDUCTOR SCIENCE AND TECHNOLOGY   33   124016   2018( ISSN：0268-1242 )

Formation of uniaxial strained Ge via control of dislocation alignment in Si/Ge heterostructures Reviewed

Shiori Konoshima, Eisuke Yonekura, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano

AIP Advances   8   075112   2018( ISSN：2158-3226 )

Investigation on the origin of preferred a-axis orientation of BaSi2 films deposited on Si(100) by thermal evaporation Reviewed

Kosuke O. Hara, Chiaya Yamamoto, Junji Yamanaka, Keisuke Arimoto, Kiyokazu Nakagawa, Noritaka Usami

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   72   93 - 98   2017.12( ISSN：1369-8001 )

Growth of strained Si/relaxed SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy Reviewed Major achievement

Keisuke Arimoto, Hiroki Nakazawa, Shohei Mitsui, Naoto Utsuyama, Junji Yamanaka, Kosuke O. Hara, Noritaka Usami, Kiyokazu Nakagawa

SEMICONDUCTOR SCIENCE AND TECHNOLOGY   32   114002   2017.11( ISSN：0268-1242 )

Thermal stability of compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si(100) substrates Reviewed

You Arisawa, Yusuke Hoshi, Kentarou Sawano, Junji Yamanaka, Keisuke Arimoto, Chiaya Yamamoto, Noritaka Usami

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   70   127 - 132   2017.11( ISSN：1369-8001 )

Fabrication of high-quality strain relaxed SiGe(110) films by controlling defects via ion implantation Reviewed

M. Kato, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano

JOURNAL OF CRYSTAL GROWTH   477   197 - 200   2017.11( ISSN：0022-0248 )

Fabrication of BaSi2 thin films capped with amorphous Si using a single evaporation source Reviewed

Kosuke O. Hara, Cham Thi Trinh, Yasuyoshi Kurokawa, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Noritaka Usami

THIN SOLID FILMS   636   546 - 551   2017.8( ISSN：0040-6090 )

Hole mobility in strained Si/SiGe/vicinal Si(110) grown by gas source MBE Reviewed Major achievement

Keisuke Arimoto, Sosuke Yagi, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Noritaka Usami, Kiyokazu Nakagawa

JOURNAL OF CRYSTAL GROWTH   468   625 - 629   2017.6( ISSN：0022-0248 )

Post-annealing effects on the surface structure and carrier lifetime of evaporated BaSi2 films Reviewed

Kosuke O. Hara, Cham Thi Trinh, Yasuyoshi Kurokawa, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Noritaka Usami

JAPANESE JOURNAL OF APPLIED PHYSICS   56   04CS07   2017.3( ISSN：0021-4922 )

Preferred Orientation of BaSi2 Thin Films Fabricated by Thermal Evaporation Reviewed

Kosuke O. Hara, Cham Thi Trinh, Yoshihiko Nakgawa, Yasuyoshi Kurokawa, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, and Noritaka Usami

JJAP Conf. Proc.   2017.1

Control of the electrical properties of BaSi2 evaporated films for solar cell applications Reviewed

Kosuke O. Hara, Cham Thi Trinh, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Yasuyoshi Kurokawa, Takashi Suemasu, Noritaka Usami

Conference Record of the IEEE Photovoltaic Specialists Conference   2016   2786 - 2789   2016.11

Anisotropic Strain Introduction into Si/Ge Hetero Structures Reviewed

K. Sawano, S. Konoshima, J. Yamanaka, K. Arimoto, K. Nakagawa

ECS Transactions   75   563   2016.10

Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator Reviewed

K. Sawano,Y. Hoshi,S. Kubo,K. Arimoto,J. Yamanaka,K. Hamaya,M. Miyao,Y. Shiraki

THIN SOLID FILMS   613   24   2016.8( ISSN：0040-6090 )

Effects of deposition rate on the structure and electron density of evaporated BaSi2 films Reviewed

Kosuke O. Hara, Cham Thi Trinh, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Yasuyoshi Kurokawa, Takashi Suemasu, Noritaka Usami

JOURNAL OF APPLIED PHYSICS   120   045103   2016.7( ISSN：0021-8979 )

Control of electrical properties of BaSi2 thin films by alkali-metal doping using alkali-metal fluorides Reviewed

Kosuke O. Hara,Weijie Du,Keisuke Arimoto,Junji Yamanaka,Kiyokazu Nakagawa,Kaoru Toko,Takashi Suemasu,Noritaka Usami

THIN SOLID FILMS   603   218 - 223   2016.3( ISSN：0040-6090 )

Compressively strained Si/Si1-xCx heterostructures formed on Ar ion implanted Si(100) substrates Reviewed

Yusuke Hoshi,You Arisawa,Keisuke Arimoto,Junji Yamanaka,Kiyokazu Nakagawa,Kentarou Sawano,Noritaka Usami

JAPANESE JOURNAL OF APPLIED PHYSICS   55   31302   2016.2( ISSN：0021-4922 )

Structural and electrical characterizations of crack-free BaSi2 thin films fabricated by thermal evaporation Reviewed

THIN SOLID FILMS   595   68 - 72   2015.11( ISSN：0040-6090 )

Low nickel germanide contact resistances by carrier activation enhancement techniques for germanium CMOS application Reviewed

Japanese Journal of Applied Physics   53   04EA0   2014.4

Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer Reviewed

Thin Solid Films   557   76 - 79   2014.4

Gas-source MBE growth of strain-relaxed Si1-xCx on Si(100) substrates Reviewed Major achievement

J. Cryst. Growth   378   212   2013.9

On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique Reviewed

J. Cryst. Growth   378   251   2013.9

Reflectance anisotropies of compressively strained Si grown on vicinal Si1-xCx (001) Reviewed Major achievement

Appl. Phys. Lett.   102   11902   2013.1

Formation of compressively strained SiGe/Si(110) heterostructures and their characterization Reviewed Major achievement

J. Cryst. Growth   362   282 - 287   2013.1

Formation of compressively strained Si/Si1-xCx/Si(100) heterostructures using gas-source molecular beam epitaxy Reviewed Major achievement

J. Cryst. Growth   362   276 - 281   2013.1

Acceptor-like states in SiGe alloy related to point defects induced by Si+ ion implantation Reviewed Major achievement

Jpn. J. Appl. Phys.   51   10580   2012.9

Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation Reviewed

Appl. Phys. Express   4   95701   2011.8

Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels Reviewed

Microelectronic Engineering   88 ( 4 )   465 - 468   2011.4

Ion dose, energy, and species dependencies of strain relaxation of SiGe buffer layers fabricated by ion implantation technique Reviewed

Journal of Applied Physics   107   10350   2010.5

Optical anisotropies of Si grown on step-graded SiGe(110) layers Reviewed Major achievement

Appl. Phys. Lett.   96   09190   2010.3

Formation of uniaxially strained SiGe by selective ion implantation technique Reviewed

Thin Solid Films   518   2454 - 2457   2010.2

Ion energy and dose dependence of strain relaxation for thin SiGe buffer layers using Si+ implantation Reviewed

Thin Solid Films   518   S162 - S164   2010.1

Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(110) substrates Reviewed Major achievement

Solid State Electronics   53   1135 - 1143   2009.10

Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures Reviewed

Appl. Phys. Lett.   95   12210   2009.9

Structural and transport properties of strained SiGe grown on V-groove patterned substrates Reviewed Major achievement

J. Cryst. Growth   311   814 - 818   2009.2

Strain relaxation mechanism in step-graded SiGe/Si(110) heterostructures grown by gas-source MBE at high temperatures Reviewed Major achievement

J. Cryst. Growth   311   819 - 824   2009.2

Crystalline morphologies of step-graded SiGe layers grown on exact and vicinal (110) Si substrates Reviewed Major achievement

J. Cryst. Growth   311   809 - 813   2009.2

Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation Reviewed

Applied Physics Express   1   12140   2008.12

Growth temperature dependence of the crystalline morphology of SiGe films grown on Si(110) substrates with compositionally step-graded buffer Reviewed Major achievement

Thin Solid Films   517   235 - 238   2008.11

Characterizations of polycrystalline SiGe films on SiO2 grown by gas-source molecular beam deposition Reviewed

Thin Solid Films   517   254 - 256   2008.11

Microstructure difference of Ni induced poly-crystallized SiGe by changing the annealing atmosphere Reviewed

Thin Solid Films   517   232 - 234   2008.11

Elastic theory for strained heterostructures with in-plane anisotropy Reviewed Major achievement

Journal of Applied Physics   104   63512   2008.9

Acceptorlike Behavior of Defects in SiGe Alloys Grown by Molecular Beam Epitaxy Reviewed Major achievement

Jpn. J. Appl. Phys.   47   4630 - 4633   2008.6

New Structure of Polycrystalline Silicon Thin-Film Transistor with Germanium Layer in Source/Drain Regions for Low-Temperature Device Fabrication Reviewed

Jpn. J. Appl. Phys.   47   1547 - 1549   2008.3

On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures Reviewed

Appl. Phys. Express   1   1140   2008.1

Growth temperature dependence of lattice structures of SiGe/graded buffer structures grown on Si(110) substrates by gas-source MBE Reviewed Major achievement

Journal of Crystal Growth   301-302   343 - 348   2007.3

Influence of Ge atoms on mobility and junction properties of thin-film transistors fabricated on solid-phase crystallized poly-SiGe Reviewed

Applied Physics Letters   89   19210   2006.11

Nanocomposites based on exfoliated NbWO6 nanosheets and ionic polyacetylenes Reviewed

G.K. Prasad, T. Takei, K. Arimoto, Y. Yonesaki, N. Kumada, N. Kinomura

Solid State Ionics   2006.10

Strain field and related roughness formation in SiGe relaxed buffer layers Reviewed

Thin Solid Films   508 ( 1-2 )   117 - 119   2006.6

Determination of lattice parameters of SiGe/Si(110) heterostructures Reviewed Major achievement

Thin Solid Films   508 ( 1-2 )   132 - 135   2006.6

Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method Reviewed

Japanese Journal of Applied Physics   44 ( 43 )   L1316 - L1319   2005.10

Changes in elastic deformation of strained Si by microfabrication Reviewed Major achievement

Materials Science in Semiconductor Processing   8   181 - 185   2005.6

Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates Reviewed

Applied Physics Letters   85 ( 13 )   2514 - 2516   2004.9

Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structures Reviewed

Journal of Crystal Growth   251   693 - 696   2003.4

Correlation between electronic states and optical properties in indirect GaAsP/GaP quantum wells with insertion of an ultrathin AlP layer Reviewed Major achievement

Physica E   8   323 - 327   2000.5

Effect of the insertion of an Ultrathin AlP layer on the optical properties of GaAsP/GaP quantum wells Reviewed Major achievement

Physical Review B   60 ( 19 )   13735 - 13739   1999.5

Temperature dependence of photoluminescence of GaP1-xNx Alloys Reviewed Major achievement

Journal of Crystal Growth   189/190   496 - 499   1998.6

Elemental and Crystallographic Analysis of Trapiche Ruby using Micro X-ray Fluorescence Spectroscopy, X-ray Pole Figure Map, and Low Vacuum Type Field Emission Scanning Electron Microscopy International conference

Junji Yamanaka, Keisuke Arimoto, Takuma Ampo, Yasushi Takahashi

Microscopy & Microanalysis 2023 Meeting  2023.7 

Evaluation of Lattice-Spacing of SiGe/Si by NBD using Two Condenser-lens TEM, Experimental Study about the Effect of Convergence Angle International conference

Junji Yamanaka, Joji Furuya, Kosuke O. Hara, Keisuke Arimoto

Microscopy & Microanalysis 2023 Meeting  2023.7 

Reflection and transmission ellipsometry measurement under incoherent superposition of light

Yoriatsu Kitamura, Sota Mogi, Tsutomu Muranaka, Keisuke Arimoto, Eiichi Kondoh, Lianhua Jin, Bernard Gelloz

Optical Technology and Measurement for Industrial Applications Conference  2023.4 

透過型ミューラー行列顕微鏡による薄膜膜厚分布計測

長瀬 仁，北村 賢功，有元 圭介，近藤 英一，金 蓮花，ジェローズ ベルナール

第70回応用物理学会春季学術講演会  2023.3 

近接蒸着法により作製したCaSi2薄膜の結晶配向性

高垣僚太、有元圭介、山中淳二、原康祐

第70回応用物理学会春季学術講演会  2023.3 

BaSi2薄膜の結晶粒界とキャリア寿命の関係

原康祐、有元圭介、宇佐美徳隆

第70回応用物理学会春季学術講演会  2023.3 

Constructing the composition ratio prediction model using machine learning for BaSi2 thin films deposited by thermal evaporation International conference

Ryuto Ueda, Keisuke Arimoto, Junji Yamanaka, Kosuke O. Hara

The 33rd International Photovoltaic Science and Engineering Conference (PVSEC-33)  2022.11 

NBD 回折円盤からの SiGe 面間隔測定における収束レンズ条件の影響

古屋丞司、有元圭介、小國琢弥、原康祐、山中淳二

日本顕微鏡学会第 65 回シンポジウム  2022.11 

歪み SiGe/Ge(111)に発生したクラックの TEM 観察

田島滉太、山中淳二、有元圭介、原康祐、我妻勇哉、澤野憲太郎

第83回応用物理学会秋季学術講演会  2022.9 

Ge/SiO2及びSi/Ge/SiO2の低温成長とそのTEM観察

近藤 弘人、有元 圭介、原 康祐、山中 淳二

第83回応用物理学会秋季学術講演会  2022.9 

Synthesis of photoconductive BaSi2 films by close-spaced evaporation International conference

Kosuke O. Hara, Chiaya Yamamoto, Junji Yamanaka, Keisuke Arimoto

The 22nd International Vacuum Congress IVC-22  2022.9 

Strain Engineering for Enhancement of Hole Mobility in Silicon Invited International conference Major achievement

Keisuke Arimoto

9th International Symposium on Control of Semiconductor Interfaces (ISCSI-IX)  2022.9 

Evaluation of Lattice-Spacing of Si and SiGe by NBD using conventional TEM International conference

Junji Yamanaka, Takuya Oguni, Joji Furuya, Kosuke O. Hara, Keisuke Arimoto

19th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors  2022.8 

Crystalline Morphology of SiGe Films Grown on Si(110) Substrates International conference Major achievement

Chihiro Sakata, Keisuke Arimoto, Kosuke O Hara, Junji Yamanaka

19th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors  2022.8 

Mechanochemically Assisted Close-Spaced Evaporation of BaSi2 Films International conference

Kosuke O. Hara, Chiaya Yamamoto, Junji Yamanaka, Keisuke Arimoto

APAC SILICIDE 2022, 6th Asia-Pacific Conference on Semiconducting Silicides  2022.7 

オパールの白濁原因について

高橋泰、山中淳二、有元圭介、安保拓真

宝石学会(日本)オンライン講演会  2022.6 

Reflection and Transmission Ellipso-Microscopy International conference

Lianhua Jin, Sota Mogi, Yoriatsu Kitamura, Tsutomu Muranaka, Keisuke Arimoto, Eiichi Kondoh, Bernard Gelloz

The 9th International Conference on Spectroscopic Ellipsometry (ICSE-9)  2022.5 

2段集束レンズTEMを用いたNBDによるSiGeと歪Siの面間隔評価

山中淳二、小國琢弥、佐野雄一、大島佑介、各川敦史、原康祐、有元圭介

日本顕微鏡学会 第78回学術講演会  2022.5 

反射・透過型エリプソメトリー計測における透明基板内反射影響

茂木 壮太、有元 圭介、近藤 英一、金 蓮花、ジェローズ ベルナール

第69回応用物理学会春季学術講演会  2022.3 

歪みSi/緩和 SiGe/Si(110)ヘテロ構造p-MOSFETの高正孔移動度化とリーク電流の低減 Major achievement

藤澤 泰輔、各川 敦史、堀内 未希、坂田 千尋、山中 淳二、原 康祐、澤野 憲太郎、中川 清和、有元 圭介

第69回応用物理学会春季学術講演会  2022.3 

Si基板上BaSi2近接蒸着膜の実効キャリア寿命

原 康祐、高垣 僚太、有元 圭介、宇佐美 徳隆

第69回応用物理学会春季学術講演会  2022.3 

機械学習を用いたBaSi2蒸着膜の組成比予測モデルの予測精度改善

上田 龍斗、有元 圭介、山中 淳二、原 康祐

第69回応用物理学会春季学術講演会  2022.3 

Si/SiGe/Si(110) 内双晶分布の X 線回折と TEM による評価

坂田 千尋、有元 圭介、各川 敦史、原 康祐、山中 淳二

日本顕微鏡学会 第64回シンポジウム  2021.11 

2段集束レンズ TEM を用いた NBD による SiGe 面間隔評価の試行

小國 琢弥、佐野 雄一、大島 佑介、原 康祐、有元 圭介、山中 淳二

日本顕微鏡学会 第64回シンポジウム  2021.11 

STEM-Moiré Applications to Crystalline Specimens without using High-End Microscopes International conference

Junji Yamanaka, Chiaya Yamamoto, Kosuke O. Hara, Keisuke Arimoto

2nd Canada – Japan Microscopy Societies Symposium 2021  2021.11 

Strain and Defect Engineering for the (110)-Oriented Si pMOSFETs Invited International conference Major achievement

Keisuke Arimoto, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa

International Conference on Materials Science and Engineering (Materials Oceania)  2021.10 

Discrimination between Coherent and Incoherent Interfaces using STEM Moiré International conference

Junji Yamanaka, Daisuke Izumi, Chiaya Yamamoto Mai Shirakura, Kosuke O. Hara, Keisuke Arimoto

Microscopy & Microanalysis 2021 Meeting  2021.8 

2段集束レンズTEMを用いたNBDによるSi面 間隔評価の試行

小國 琢弥 ，佐野 雄一 ，原 康祐 ，有元 圭介 ，山中 淳二

日本顕微鏡学会 第77回学術講演会  2021.6 

電流変調抵抗率測定におけるSiウェーハ表面ダメージの影響

原 康祐、塚越 由花、牧瀬 啓人、有元 圭介、星 裕介、松島 悟

第68回応用物理学会春季学術講演会  2021.3 

歪みSi/SiGe/Si(110)ヘテロ構造へのin situ Sbドーピングに関する研究 Major achievement

吉川 満希、浪内 大地、陳 北辰、堀内 未希、藤澤 泰輔、山中 淳二、原 康祐、中川 清和、有元 圭介

第68回応用物理学会春季学術講演会  2021.3 

Si(110)基板上への組成傾斜SiGe層形成法に関する研究 Major achievement

堀内 未希、斎藤 慎吾、原 康介、山中 淳二、有元 圭介

第68回応用物理学会春季学術講演会  2021.3 

近接蒸着法によるCaGe2成膜とゲルマナンへの変換

原 康祐、國枝 慎、山中 淳二、有元 圭介、伊藤 麻維、黒澤 昌志

第68回応用物理学会春季学術講演会  2021.3 

メカノケミカル効果を活用した近接蒸着法によるBaSi2成膜

原 康祐、山本 千綾、山中 淳二、有元 圭介

第68回応用物理学会春季学術講演会  2021.3 

Dependences of the hole mobility in the strained Si pMOSFET formed on SiGe/Si(110) on strained Si thickness and the channel direction International conference Major achievement

Keisuke Arimoto, Taisuke Fujisawa, Daichi Namiuchi, Atsushi Onogawa, Yuichi Sano, Daisuke Izumi, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa

The 8th Asian Conference on Crystal Growth and Crystal Technology  2021.3 

Engineering Strain, Defects, and Electronic Properties of (110)-Oriented Strained Si Invited International conference Major achievement

K. Arimoto, J. Yamanaka, K. O. Hara, K. Sawano, N. Usami and K. Nakagawa

ECS PRiME 2020  2020.10  The Electrochemical Society

歪みSi/緩和SiGe/Si(110)ヘテロ構造p-MOSFETにおける正孔移動度のチャネル方向依存性 Major achievement

藤澤 泰輔、各川 敦史、浪内 大地、佐野 雄一、泉 大輔、山中 淳二、原 康祐、澤野 憲太郎、中川 清和、有元 圭介

第81回応用物理学会秋季学術講演会  2020.9  応用物理学会

HREM Observation and Identification of the Causality of Twins in SiGe/Si (110) International conference

Junji Yamanaka, Yuichi Sano, Shingo Saito, Atsushi Onogawa, Kosuke Hara, Kiyokazu Nakagawa, Keisuke Arimoto

Microscopy & Microanalysis 2020 Meeting  2020.8 

真空蒸着法によるSrSi2の薄膜作製

瀧澤 周平、原 康祐、山中 淳二、有元 圭介

第67回応用物理学会春季学術講演会  2020.3 

近接蒸着法によるCaSi2とCaGe2の成膜

原 康祐、瀧澤 周平、山中 淳二、黒澤 昌志、有元 圭介

第67回応用物理学会春季学術講演会  2020.3 

Critical Thickness of SiGe on Si(110) Substrate International conference Major achievement

Shingo Saito, Yuichi Sano, Kosuke. O. Hara, Junji Yamanaka, Keisuke Arimoto, Kiyokazu Nakagawa

8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8)  2019.11 

Practical Growth Processes of Silicide and Germanide Thin Films for Photovoltaic and Electronic Applications Invited International conference

Kosuke O. Hara, Shuhei Takizawa Noritaka Usami, Junji Yamanaka, Keisuke Arimoto

8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8)  2019.11 

Hole Mobility in Strained Si/Relaxed SiGe/Si(110) Hetero Structures Studied by Gated Hall Measurements International conference Major achievement

Daichi Namiuchi, Atsushi Onogawa, Keisuke Arimoto, Yuichi Sano, Daisuke Izumi, Junji Yamanaka, Kosuke O Hara, Kentarou Sawano, Kiyokazu Nakagawa

8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8)  2019.11 

Close-spaced Evaporation: Scalable Technique for BaSi2 Film Deposition International conference

Kosuke O. Hara, Shuhei Takizawa, Noritaka Usami, Junji Yamanaka, Keisuke Arimoto

29th International Photovoltaic Science and Engineering Conference (PVSEC-29)  2019.11 

真空蒸着でのBaSi2成膜における基板加熱条件の影響

矢澤 大典、原 康祐、山中 淳二、有元 圭介

第80回応用物理学会秋季学術講演会  2019.9 

BaSi2融液から発生する蒸気組成の理論解析

原 康祐、山中 淳二、有元 圭介

第80回応用物理学会秋季学術講演会  2019.9 

歪みSi/緩和SiGe/Si(110)ヘテロ構造の反転キャリアのHall移動度評価 Major achievement

浪内 大地、澤野 憲太郎、各川 敦史、佐野 雄一、泉 大輔、有元 圭介、山中 淳二、原 康祐、中川 清和

第80回応用物理学会秋季学術講演会  2019.9 

Si(110)基板上のSiGeの臨界膜厚に関する研究 Major achievement

斎藤 慎吾、佐野 雄一、有元 圭介、山中 淳二、原 康祐、中川 清和

第80回応用物理学会秋季学術講演会  2019.9 

歪みSi/緩和SiGe/Si(110)ヘテロ構造p-MOSFETにおける電界効果移動度の歪みSi膜厚依存性 Major achievement

藤澤 泰輔、各川 敦史、浪内 大地、斎藤 慎吾、佐野 雄一、泉 大輔、山中 淳二、原 康祐、澤野 憲太郎、中川 清和、有元 圭介

第80回応用物理学会秋季学術講演会  2019.9 

Hole Mobility Enhancement Observed in (110)-Oriented Strained Si International conference Major achievement

Keisuke Arimoto, Naoto Utsuyama, Shohei Mitsui, Kei Satoh, Takane Yamada, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa

2019 International Conference on Solid State Devices and Materials (SSDM2019)  2019.9 

Evaluation of Crystal Lattice Rotation around a Stress-Induced Twin in a Step-Graded SiGe / Si (110) Using STEM Moiré Observation and its Image Analysis International conference

Junji Yamanaka, Chiaya Yamamoto, Mai Shirakura, Kosuke O. Hara, Keisuke Arimoto, Kiyokazu Nakagawa, Akimitsu Ishizuka, and Kazuo Ishizuka

Microscopy & Microanalysis 2019 Meeting  2019.8 

Physicochemical study of BaSi2 evaporation for composition-controlled film deposition International conference

Kosuke O. Hara, Keisuke Arimoto, Junji Yamanaka, and Kiyokazu Nakagawa

The 5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials 2019 (APAC-Silicide 2019)  2019.7 

Elucidating the SnS/BaSi2 Interface Reaction for SnS/BaSi2 Heterojunction Solar Cells International conference

Kosuke O. Hara, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa

10th International Conference on Materials for Advanced Technologies (ICMAT2019)  2019.6 

SiGe のSTEM モアレ観察-収差補正有無での比較

泉大輔、波多聰、白倉麻依、佐藤圭、原康祐、有元圭介、中川清和、山中淳二

日本顕微鏡学会 第75回学術講演会  2019.6 

Relaxation of strain in Si layers formed on (110)-oriented SiGe/Si heterostructures International conference Major achievement

Keisuke Arimoto, Atsushi Onogawa, Shingo Saito, Yuichi Sano, Daisuke Izumi, Junji Yamanaka, Kosuke O. Hara, Kiyokazu Nakagawa

2nd Joint ISTDM / ICSI 2019 Conference  2019.6 

Formation of SnS/BaSi2 Heterojunction by Sequential Thermal Evaporation toward Solar Cell Applications International conference

Kosuke O. Hara, Keisuke Arimoto, Junji Yamanaka, and Kiyokazu Nakagawa

2018 International Conference on Solid State Devices and Materials(SSDM2018)  2018.9 

STEM Moiré Observation of the Compositionally Step-Graded SiGe Thin Film and its Image Analysis International conference

Junji Yamanaka, Chiaya Yamamoto, Mai Shirakura, Kei Sato, Takane Yamada, Kosuke O. Hara, Keisuke Arimoto, Kiyokazu Nakagawa, Akimitsu Ishizuka, and Kazuo Ishizuka

19th International Microscopy Congress (IMC19)  2018.9 

Feasibility Study to Evaluate Lattice-Space Changing of a Step-Graded SiGe / Si (110) Using STEM Moiré International conference

Junji Yamanaka, Mai Shirakura, Chiaya Yamamoto, Kei Sato, Takane Yamada, Kosuke O. Hara, Keisuke Arimoto, Kiyokazu Nakagawa, Akimitsu Ishizuka, Kazuo Ishizuka

The 3rd Int'l Conference on Metal Materials and Engineering (MME 2018)  2018.7 

Composition control of semiconducting BaSi2 films fabricated by thermal evaporation International conference

Kosuke O. Hara, Keisuke Arimoto, Junji Yamanaka, and Kiyokazu Nakagawa

Collaborative Conference on Materials Research (CCMR) 2018  2018.6 

Stability of strain in Si layers formed on SiGe/Si(110) heterostructures International conference Major achievement

Keisuke Arimoto, Takane Yamada, Kei Sato, Naoto Utsuyama, Atsushi Onogawa, Junji Yamanaka, Kosuke O. Hara, Kiyokazu Nakagawa

Joint ISTDM/ICSI 2018 Conference  2018.5 

(110)面歪みSi薄膜の臨界膜厚 Major achievement

有元圭介、各川敦史、山田祟峰、原康祐、山中淳二、中川清和

第65回応用物理学会春季学術講演会  2018.3 

BaSi2蒸着における蒸気組成と成膜過程解析

原康祐、有元圭介、山中淳二、中川清和

第65回応用物理学会春季学術講演会  2018.3 

Simple Thermal Evaporation Route to Single-Phase and Highly-Oriented BaSi2 Thin Films Invited International conference

Kosuke O. Hara, Chiaya Yamamoto, Junji Yamanaka, Keisuke Arimoto, Kiyokazu Nakagawa, Noritaka Usami

2017 MRS Fall Meetings & Exhibit  2017.11 

高移動度トランジスタ実現に向けた４族半導体の歪みエンジニアリング Invited Major achievement

有元圭介

第２回ニューフロンティアリサーチワークショップ  2017.11  応用物理学会東海支部

Development of preferred orientation in evaporated BaSi2 films on Si(100) by controlling the near-interface structure International conference

Kosuke O. Hara, Chiaya Yamamoto, Junji Yamanaka, Keisuke Arimoto, Kiyokazu Nakagawa, and Noritaka Usami

27th International Photovoltaic Science and Engineering Conference (PVSEC-27)  2017.11 

STEM Moiré Observations of Si/SiGe/Si (110) International conference

Junji Yamanaka, Chiaya Yamamoto, Mai Shirakura, Kei Sato, Takane Yamada, Kosuke O. Hara, Keisuke Arimoto and Kiyokazu Nakagawa

The 3rd East-Asia Microscopy Conference,EAMC3  2017.11 

Microstructural Characteristics of BaSi2 Epitaxial Films Fabricated by Thermal Evaporation International conference

K. O. Hara, C. Yamamoto, J. Yamanaka, K. Arimoto, K. Nakagawa, N. Usami

2017 International Conference on Solid State Devices and Materials (SSDM2017)  2017.9 

二段階成長法を用いたSi(110)基板上Ge層の作製と評価

大木 健司、有元 圭介、山中 淳二、中川 清和、澤野 憲太郎

第78回応用物理学会秋季学術講演会  2017.9 

BaSi2蒸着膜中の酸素濃度低減と結晶配向への影響

原 康祐、山中 淳二、有元 圭介、中川 清和、宇佐美 徳隆

第78回応用物理学会秋季学術講演会  2017.9 

BaSi2蒸着膜のa-Si被覆による表面酸化抑制

原 康祐，Cham Thi Trinh，黒川 康良，有元 圭介，山中 淳二，中川 清和，宇佐美 徳隆

第14 回 「次世代の太陽光発電システム」シンポジウム  2017.7 

Growth of Strained Silicon Film for High hole mobility Device International conference Major achievement

Keisuke Arimoto, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Noritaka Usami, Kiyokazu Nakagawa

BIT’s 6th Annual World Congress of Advanced Materials (WCAM-2017)  2017.6 

階段状組成傾斜SiGe/Si(110)のSTEMモアレ観察

山中 淳二，山本 千綾，白倉 麻依，佐藤 圭，山田 崇峰，原 康祐，有元 圭介，中川 清和

第73回日本顕微鏡学会学術講演会  2017.5 

Growth of strained Si/SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy International conference Major achievement

Keisuke Arimoto, Hiroki Nakazawa Shohei Mitsui, Naoto Utsuyama, Junji Yamanaka, Kosuke O. Hara, Noritaka Usami, Kiyokazu Nakagawa

The 10th International Conference on Silicon Epitaxy and heterostructures  2017.5 

BaSi2蒸着膜中の酸素不純物に関する調査

原康祐、山本千綾、山中淳二、有元圭介、中川清和、黒川康良、宇佐美徳隆

第64回応用物理学会春季学術講演会  2017.3  応用物理学会

GaNパワートランジスタのためのゲートSiO2膜形成技術の開発

前川拓也、小木曽真一、有元圭介、山中淳二、荒井哲司、中川清和、高松利行、上野勝典

第64回応用物理学会春季学術講演会  2017.3  応用物理学会

Ohmic Contact Formation for n+ 4H-SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation International conference

Tetsuji Arai, Kazuki Kamimura, Chiaya Yamamoto, Mai Shirakura, Keisuke Arimoto,Junji Yamanaka, Kiyokazu Nakagawa, Toshiyuki Takamatsu, Masaaki Ogino,Masaaki Tachioka, Haruo Nakazawa

The 3rd Int’l Conference on Thin Film Technology and Applications (TFTA2017)  2017.1 

STEM Moiré Observation of Lattice-Relaxed Germanium Grown on Silicon International conference

Junji Yamanaka, Chiaya Yamamoto, Hiroki Nakaie, Tetsuji Arai, Keisuke Arimoto, Kosuke O. Hara, Kiyokazu Nakagawa

The 3rd Int’l Conference on Thin Film Technology and Applications (TFTA2017)  2017.1 

TEM observation of Si0.99C0.01 Thin Films with Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation follewd by Rapid Thermal Annealing International conference

Junji Yamanaka, Shigenori Inoue, Keisuke Arimoto, Kiyokazu Nakagawa, Kentarou Sawano, Ya-suhiro Shiraki, Atsushi Moriya, Yasuhiro Inokuchi, Yasuo Kunii

The 3rd Int’l Conference on Thin Film Technology and Applications (TFTA2017)  2017.1 

Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave, Plasma Heating and Fabrication of High Hole, Mobility MOSFETs on Ge Layers International conference

Hiroki Nakaie, Tetsuji Arai, Chiaya Yamamoto, Keisuke Arimoto, Junji Yamanaka,Kiyokazu Nakagawa, Toshiyuki Takamatsu

The 3rd Int’l Conference on Thin Film Technology and Applications (TFTA2017)  2017.1 

Growth of (110)-Oriented SiGe-Based Heterostructures for High Hole Mobility Devices Invited International conference Major achievement

Keisuke Arimoto, Junji Yamanaka, Kosuke O. Hara, Noritaka Usami, Kiyokazu Nakagawa

2016 Global Research Efforts on Energy and Nanomaterials (GREEN 2016)  2016.12 

Close relationship between electrical properties and microstructure of semiconducting BaSi2 films Invited International conference

Kosuke O. Hara, Cham Thi Trinh, Junji Yamanaka, Keisuke Arimoto, Kiyokazu Nakagawa, Yasuyoshi Kurokawa, Noritaka Usami

2016 Global Research Efforts on Energy and Nanomaterials (GREEN 2016)  2016.12 

Fabrication of BaSi2 thin films passivated by amorphous Si using a single evaporation source International conference

Kosuke O. Hara, Cham Thi Trinh, Yasuyoshi Kurokawa, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, and Noritaka Usami

26th Photovoltaic Science and Engineering Conference (PVSEC-26)  2016.10 

Surface Modification of Evaporated BaSi2 Films by In-situ Post-annealing and Amorphous Silicon Capping International conference

K.O. Hara, C.T. Trinh, Y. Kurokawa, K. Arimoto, J. Yamanaka, K. Nakagawa, N. Usami

2016 International Conference on Solid State Devices and Materials (SSDM2016)  2016.9 

Si(110)基板上SiGe膜の歪み緩和におけるイオン注入の効果

加藤まどか、村上太陽、有元圭介、山中淳二、中川清和、澤野憲太郎

第77回応用物理学会秋季学術講演会  2016.9  応用物理学会

伸張歪みSi/緩和SiGe/Si(110)ヘテロ構造の結晶成長中における表面形状形成過程に関する研究 Major achievement

山田崇峰、宇津山直人、佐藤圭、白倉麻衣、山本千綾、有元圭介、山中淳二、原康祐、宇佐美徳隆、澤野憲太郎、中川清和

第77回応用物理学会秋季学術講演会  2016.9  応用物理学会

イオン注入歪み緩和法を用いて形成したSi/Si1-xCx/Si(001)構造の結晶性評価 Major achievement

村上太陽、有元圭介、山中淳二、原康祐、山本千綾、宇佐美徳隆、星裕介、有澤洋、澤野憲太郎、中川清和

第77回応用物理学会秋季学術講演会  2016.9  応用物理学会

単一原料の蒸着によるa-Si/BaSi2積層構造の作製

原康祐、Trinh Cham Thi、黒川康良、有元圭介、山中淳二、中川清和、宇佐美徳隆

第77回応用物理学会秋季学術講演会  2016.9  応用物理学会

伸張歪みSi/SiGe/Si(110)ヘテロ構造の表面モフォロジーに成長速度が及ぼす影響 Major achievement

佐藤圭、宇津山直人、山田崇峰、有元圭介、山中淳二、原康祐、澤野憲太朗、宇佐美徳隆、中川清和

第77回応用物理学会秋季学術講演会  2016.9  応用物理学会

水素ラジカルを用いた選択加熱によるn+ 4H-SiCへのオーミック電極形成

荒井哲司、上村和貴、山本千綾、白倉麻依、有元圭介、山中淳二、中川清和、高松利行、荻野正明、立岡正明、中澤治雄

第77回応用物理学会秋季学術講演会  2016.9  応用物理学会

The Influence of Stress-Induced Twins upon Surface Morphology of SiGe/Si(110) International conference

J. Yamanaka, M. Shirakura, C. Yamamoto, N. Utsuyama, K. Sato, T. Yamada, K. Arimoto, K. Nakagawa

The 18th International Conference on Crystal Growth and Epitaxy(ICCGE-18)  2016.8 

Hole Mobility in Strained Si/SiGe/Vicinal Si(110) Grown by Gas Source MBE International conference Major achievement

K. Arimoto,S. Yagi,J. Yamanaka,K. Nakagawa,N. Usami,K. Sawano

The 18th International Conference on Crystal Growth and Epitaxy(ICCGE-18)  2016.8 

Preferred Orientation of BaSi2 Thin Films Fabricated by Thermal Evaporation International conference

Kosuke O. Hara, Cham Thi Trinh, Yoshihiko Nakgawa, Yasuyoshi Kurokawa, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, and Noritaka Usami

Asia-Pacific Conference on Semiconducting Silicides and Related Materials (APAC-SILICIDE 2016)  2016.7 

STEM and TEM observations of defects distribution of Ge/Si annealed by new heating method using plasma technique International conference

Junji YAMANAKA,Chiaya YAMAMOTO,Kazuki KAMIMURA,Hiroki NAKAIE,Tetsuji ARAI,Keisuke ARIMOTO,Kiyokazu NAKAGAWA

THERMEC’2016  2016.7 

伸張歪みSi/SiGe/Si(110)ヘテロ構造中のmicrotwinが表面モフォロジーに及ぼす影響 Major achievement

佐藤圭、宇津山直人、山田崇峰、有元圭介、山本千綾、山中淳二、原康祐、中川清和、宇佐美徳隆、澤野憲太郎

第63回応用物理学会春季学術講演会  2016.3  応用物理学会

伸張歪みSi/SiGe/Si(110)ヘテロ構造中のmicrotwinが表面モフォロジーに及ぼす影響 Major achievement

第63回応用物理学会春季学術講演会  2016.3 

微傾斜基板を用いた伸張歪みSi/緩和SiGe/Si(110)ヘテロ構造のモフォロジー及び素子特性 Major achievement

第63回応用物理学会春季学術講演会  2016.3 

Si-ULSI用の電極形成のための熱処理技術の開発

上村 和貴、中家 大希、荒井 哲司、山本 千綾、有元 圭介、山中 淳二、中川 清和、高松 利行

第63回応用物理学会春季学術講演会  2016.3  応用物理学会

高速成膜によるBaSi2蒸着膜の構造・特性変化

原 康祐、Trinh Thi Cham、黒川 康良、有元 圭介、山中 淳二、中川 清和、末益 崇、宇佐美 徳隆

第63回応用物理学会春季学術講演会  2016.3  応用物理学会

微傾斜基板を用いた伸張歪みSi/緩和SiGe/Si(110)ヘテロ構造のモフォロジー及び素子特性 Major achievement

宇津山直人、佐藤圭、山田崇峰、有元 圭介、山中淳二、中川清和、原康祐、宇佐美徳隆、澤野憲太郎

第63回応用物理学会春季学術講演会  2016.3  応用物理学会

GaNパワートランジスタのためのゲート酸化膜堆積技術の開発

高木 翔太、荒井 哲司、有元 圭介、山中 淳二、中川 清和、高松 利行、上野 勝典

第63回応用物理学会春季学術講演会  2016.3  応用物理学会

Growth of strained Si/SiGe on Si(110) substrates for realization of high-mobility devices Major achievement

EMN 3CG 2015 (Collaborative Conference on Crystal Growth)  2015.12 

TEM observation of defects induced into semiconductor thin films under the control

The 2015 International Symposium for Advanced Materials Research(ISAMR2015)  2015.8 

歪みSi/Si1-xCx/Si(001) 構造の不純物活性化過程における結晶性及び電気特性評価 Major achievement

藤原幸亮,その他９名

第75回応用物理学会秋季学術講演会  2014.9 

伸張歪みSi/ 緩和SiGe/Si(110) の微細構造および電気的特性への熱処理の影響 Major achievement

宇津山直人,有元圭介,その他４名

第75回応用物理学会秋季学術講演会  2014.9 

イオン注入法で作製した圧縮歪みSi/Si1-xCx/Si(001) 構造の結晶性及びデバイス特性評価 Major achievement

中込諒,その他９名

第75回応用物理学会秋季学術講演会  2014.9 

Low NiGe Contact Resistances by Carrier Activation Enhancement (CAE) Techniques for Ge CMOSFETs

International Conference on Solid State Devices and Materials  2013.9 

Linear and nonlinear optical response from strained silicon layers

Optics of Surfaces and Interfaces (OSI)  2013.9 

Formation of Ge(111) on Insulator by Ge Epitaxy on Si(111) and Layer Transfer

The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)  2013.6 

ガスソースMBE法によるシリコン・炭素混晶の結晶成長と欠陥形成過程の解明 Major achievement

古川洋志,酒井翔一朗,有元圭介,その他４名

第60回応用物理学会春季学術講演会  2013.3 

Formation of high-quality Ge(111) layers on Si(111) substrates

The 17th International Conference on Molecular Beam Epitaxy  2012.9 

Gas-source MBE growth of compressively strained-Si/Si1-xCx/Si(100) heterostructures Major achievement

The 17th International Conference on Molecular Beam Epitaxy  2012.9 

Formation and Application of Compressively Strained SiGe/Si(110) Heterostructure Major achievement

The 5th Asian Conference on Crystal Growth and Crystal Technology  2011.6 

Electron Mobility in Strained Si-nMOSFET Formed on Vicinal Si(110) Substrate Major achievement

The 5th Asian Conference on Crystal Growth and Crystal Technology  2011.6 

Formation of Compressively Strained Si/Si1-xCx/Si(100) Heterostructure Using Gas-source MBE Major achievement

The 5th Asian Conference on Crystal Growth and Crystal Technology  2011.6 

Relation between hole mobility in (110)-oriented strained Si and crystalline morphology Major achievement

The Japan Society of Applied Physics, The 71th Fall Meeting  2010.9 

Reflectance Difference Spectroscopy of SiGe(110) virtual substrates Major achievement

5th International Conference on Spectroscopic Ellipsometry (ICSE-V)  2010.5 

Influence of compressive and tensile strain on hole effective mobility Major achievement

The Japan Society of Applied Physics, The 57th Spring Meeting  2010.3 

Orientation dependence of hole effective mass in strained Si Major achievement

The Japan Society of Applied Physics, The 70th Fall Meeting  2009.9 

Formation of Uniaxially Strained SiGe by Selective Ion Implantation Technique

E-MRS 2009 Spring Meeting  2009.6 

Ion dose and species dependence of strain relaxation of SiGe buffer layers formed by ion-implantation technique

6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6)  2009.5 

Mechanism of strain relaxation in SiGe films grown on Si(110) substrates Major achievement

4th International WorkShop on New Group IV Semiconductor Nanoelectronics  2008.9 

Strain Analysis of strained-Si /SiGe structures grown on Si(110) substrates Major achievement

The Japan Society of Applied Physics, The 69th Fall Meeting  2008.9 

Strain Relaxation Mechanisms in Compositionally Uniform and Step-Graded SiGe Films Grown on Si(110) Substrates Major achievement

4th International SiGe Technology and Device Meeting (ISTDM2008)  2008.5 

Crystalline morphology of step-graded SiGe layers grown onexact and vicinal (110) Si substrates Major achievement

The 4th Asian Conference on Crystal Growth and Crystal Technology  2008.5 

A calculation on the hole density dependence of hole effective mass in compressively strained Ge Major achievement

The Japan Society of Applied Physics, The 68th Fall Meeting  2007.9 

Growth temperature dependence of morphology of step-graded SiGe grown on Si(110) substrate Major achievement

The Japan Society of Applied Physics, The 68th Fall Meeting  2007.9 

Growth temperature dependence of the defect morphology in SiGe films grown on Si(110) substrates with step-graded buffer being employed Major achievement

Fifth International Conference on Silicon Epitaxy and Heterostructures (ICSI-5)  2007.5 

Growth of step-graded SiGe layers on Si(110) substrates using gas-source molecular beam epitaxy Major achievement

The Japan Society of Applied Physics, The 54th Spring Meeting  2007.3 

Growth temperature dependence of the lattice structures of SiGe films grown on Si(110) substrates by gas source MBE Major achievement

The 14th International Conference on Molecular Beam Epitaxy (MBE2006)  2006.9 

Growth temperature dependence of strain-relaxation mechanism of SiGe/Si(110) grown by gas source MBE Major achievement

The Japan Society of Applied Physics, The 53th Spring Meeting  2006.3 

SiO2上に形成した多結晶SiGe-TFTのリーク電流評価

三井 実,有元圭介,中川清和,宇佐美徳隆,澤野憲太郎,白木靖寛

第66回応用物理学会学術講演会  2005.9 

Determination of strain parameters of strained-Si on Si(110) by Raman spectroscopy Major achievement

The Japan Society of Applied Physics, The 66th Fall Meeting  2005.9 

Transport Properties of SPC-Poly SiGe Crystallized at 700C and GSMBE-Poly SiGe Grown at 600C

Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4)  2005.5 

Determination of Lattice Parameters of Strained-Si/SiGe Heterostructures Grown on Si(110) Substrates Major achievement

Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4)  2005.5 

Analysis of crystal structure of SiGe deposited on Si(110) substrate (2) Major achievement

The Japan Society of Applied Physics, The 52th Spring Meeting  2005.3 

Geを用いた新規低温ソースドレイン領域形成法

三井実,有元圭介,山中淳二,中川清和,澤野憲太郎,白木靖寛

第52回応用物理学関係連合講演会  2005.3 

Elastic Strain Distribution in Narrow Strained Si Channels Major achievement

Third International Workshop on New Group IV (Si-Ge-C) Semiconductors  2004.10 

Si基板上に成長したノンドープ緩和SiGeの電気伝導特性

佐藤元樹,土屋勇介,有元圭介,中川清和,澤野憲太郎,黄晋二,白木靖寛

第65回応用物理学会学術講演会  2004.9 

Changes in Elastic Deformation of Strained Si by Micro-Fabrication Major achievement

Second International SiGe Technology and Device Meeting  2004.5 

多結晶Si1-xGex薄膜の形成と電気伝導特性

三井実,加藤敦,有元圭介,山中淳二,中川清和,澤野憲太郎,黄晋二,白木靖寛

第51回応用物理学関係連合講演会  2004.3 

Analysis of crystal structure of SiGe deposited on Si(110) substrate Major achievement

The Japan Society of Applied Physics, The 51th Spring Meeting  2004.3 

Transport Properties of Polycrystalline SiGe Thin Films Grown on SiO2

MRS Fall Meeting  2004 

Si基板上に成長したi-SiGeの電気伝導特性

佐藤元樹,土屋勇介,有元圭介,中川清和,澤野憲太郎,黄晋二,白木靖寛

第64回応用物理学会学術講演会  2003.8 

金属誘起固相成長法により作製した多結晶Si1-xGex薄膜デバイスの電気伝導特性

三井実,加藤敦,有元圭介,中川清和,澤野憲太郎,黄晋二,白木靖寛

第64回応用物理学会学術講演会  2003.8 

SiGe緩和バッファー層の歪みゆらぎがヘテロ構造に及ぼす影響

澤野憲太郎,宇佐美徳隆,有元圭介,黄晋二,中川清和,白木靖寛

第64回応用物理学会学術講演会  2003.8 

Dependence of Electron Mobility in Strained-Si MOSFETs on Device Size Major achievement

The Japan Society of Applied Physics, The 64th Fall Meeting  2003.8 

空間分解ラマン分光法を用いた微細歪みSi素子の歪み緩和の検討 Major achievement

有元圭介,布留川大輔,中川清和,澤野憲太郎,黄晋二,白木靖寛,宇佐美徳隆

第50回応用物理学関係連合講演会  2003 

空間分解ラマン分光法によるSiGe緩和バッファー層の歪み分布測定

澤野憲太郎,宇佐美徳隆,小澤優介,有元圭介,廣瀬佳久,黄晋二,中川清和,服部健雄,白木靖寛

第63回応用物理学会学術講演会  2002 

Correlation between Electronic States and Optical Properties in Indirect GaAsP/GaP Quantum Wells with Insertion of Ultrathin AlP Layer

The Ninth International Conference on Modulated Semiconductor Structures (MSS9)  1999.7 

Enhanced no-phonon transition in indirect GaAsP/GaP quantum wells with insertion of monolayer AlP

Japan – UK 10+10 Meeting; New Developments in Advanced Electronic and Optical Materials and Devices  1999.3 

電子局在層を挿入したGaAsP/GaP量子井戸の発光特性 Major achievement

有元圭介,宇佐美徳隆,白木靖寛

第59回応用物理学会学術講演会  1998 

Temperature Dependence of Photoluminescence of GaP1-xNx Alloys

The Second International Conference on Nitride Semiconductors (Tokushima, Japan, October 1997)  1997.10 

Temperature Dependence of Photoluminescence Intensities in GaP1-xNx Alloys

16th Electronic Materials Symposium (Minoo, Japan, July 1997)  1997.7 

GaP1-xNx混晶におけるフォトルミネッセンス強度の温度依存性

琵琶剛志,矢口裕之,三吉靖郎,青木大一郎,有元圭介,尾鍋研太郎,白木靖寛,伊藤良一

第44回応用物理学関係連合講演会  1997 

2013

Total number of non-preannounced events：12  Number of main presenters：2  Number of presenters other than main person：10

2012

Total number of non-preannounced events：6  Number of main presenters：0  Number of presenters other than main person：6

2011

Total number of non-preannounced events：13  Number of main presenters：0  Number of presenters other than main person：13

2010

Total number of non-preannounced events：8  Number of main presenters：0  Number of presenters other than main person：8

2009

Total number of non-preannounced events：8  Number of main presenters：0  Number of presenters other than main person：8

2008

Total number of non-preannounced events：10  Number of main presenters：0  Number of presenters other than main person：10

2007

Total number of non-preannounced events：19  Number of main presenters：0  Number of presenters other than main person：19

2006

Total number of non-preannounced events：15  Number of main presenters：0  Number of presenters other than main person：15

2005

Total number of non-preannounced events：2  Number of main presenters：0  Number of presenters other than main person：2

2004

Total number of non-preannounced events：8  Number of main presenters：0  Number of presenters other than main person：8

Wine and Gem Major achievement

2023Year  Type of subject：Common education (undergraduate)

応用工学実験II Major achievement

2017Year  Type of subject：Professional education (undergraduate)

応用工学実験I

2017Year  Type of subject：Professional education (undergraduate)

応用工学実験I

2016Year  Type of subject：Professional education (undergraduate)

応用工学実験II Major achievement

2016Year  Type of subject：Professional education (undergraduate)

物理学実験（電気電子システム工学科Sクラス） Major achievement

2009Year  Type of subject：Professional education (undergraduate)

物理学実験（電気電子システム工学科Eクラス） Major achievement

2009Year  Type of subject：Professional education (undergraduate)