Updated on 2024/12/03
University of Yamanashi Associate Prof. @ University of Yamanashi Associate Professor
2024.4
University of Yamanashi Associate Prof. @ University of Yamanashi
2022.7
AIST ADPERC Visiting researcher
2020.7
University of Yamanashi Associate Prof. @ University of Yamanashi Associate Professor
2020.7 - 2024.3
AIST ADPERC Visiting researcher
2017.6 - 2020.6
University of Yamanashi Assistant Prof. @ University of Yamanashi Assistant Professor
2013.4 - 2020.6
University of Hamburg
- 2007.8
Country： Germany
Course： Doctor course
Ph.D (Natural Science) ( 2007.8 )
Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment
Silicon carbide(SiC) semiconductor devices & ICs
Design, fabrication and evaluation of SiC semiconductor deivces & ICs
An improved 4H-SiC trench MOS barrier Schottky diode with current spreading layer and low resistance layer Reviewed Major achievement
H. Ge, W. Zhen, C. Yu, M. Yamamoto, W. Zhao, H. Guo, X. Wu
Microelectronics Journal 154 106451-1 - 106451-9 2024.10( ISSN：0026-2692 )
Comparison of Si CMOS and SiC CMOS Operational Amplifiers Reviewed Major achievement
Ryosuke Kobayashi, Masayuki Yamamoto
Solid State Phenomena 360 157 - 161 2024.8( ISSN：16629779 )
Fabrication of the SiC Gate-All-Around JFET Reviewed Major achievement
Masaya Mochizuki, Masayuki Yamamoto, Hitoshi Umezawa, Yasunori Tanaka
IEEE Transactions on Electron Deivces 70 ( 9 ) 4612 - 4617 2023.8( ISSN：00189383 )
Avalanche Robustness Investigation of SiC Avalanche Diodes at High Temperatures Reviewed Major achievement
Takato Sekiguchi, Masaya Mochizuki, Masayuki Yamamoto, Koji Nakayama, Yasunori Tanaka
Materials Science Forum 1092 145 - 149 2023.6
Utilization of SiC Avalanche Diode as a Solid-State Snubber Reviewed Major achievement
K. Koseki, Y. Tanaka, K. Nakayama and M. Yamamoto
23rd European Conference on Power Electronics and Applications 1 - 7 2021.10
Surge absorption by the 430V mesa-structured SiC avalanche diode Reviewed Major achievement
M. Yamamoto, K. Koseki, K. Nakayama, Y. Tanaka, S. Nishiyama
Proc. of the 32th ISPSD 186 - 189 2020.8
Evaluation of Surge Reduction Performance of a SiC Avalanche Diode with Mesa Structure in a Switching Power Supply Reviewed Major achievement
K. Koseki, M. Yamamoto, Y. Tanaka
1004 1129 - 1133 2020.7
Enhancement of Surge-Suppression Performance of a Solid-State Snubber by a SiC Avalanche-Diode Reviewed Major achievement
K. Koseki, M. Yamamoto, Y. Tanaka
Proc. of 2020 IEEE Applied Power Electronics Conference (APEC) 2548 - 2553 2020.6
Fabrication of a High-Voltage SiC Avalanche Diode with a Superior Voltage Clamp Property Reviewed Major achievement
M. Yamamoto, K. Koseki, Y. Tanaka
Proc. of the 31th ISPSD 171 - 174 2019.7
A study of fastening the switching speed for wide bandgap semiconductor based Super Cascode Reviewed Major achievement
X. Wang, M. Yamamoto
Materials Science Forum 963 823 - 826 2019.7
Extremely low on-resistance SiC cascode configuration using buried-gate static induction transistor Reviewed Major achievement
K. Yano, Y. Tanaka, M. Yamamoto
IEEE ELECTRON DEVICE LETTERS 39 1892 - 1895 2018.12( ISSN：0741-3106 )
Experimental Demonstration of SiC Screen GridVertical JFET (SiC-SGVJFET) Having a Ultra-Low Crss Reviewed Major achievement
487 - 490 2016.7
Cascode Configuration of SiC-BGSIT and Si-MOSFET with Low On-Resistance and High Transconductance Reviewed Major achievement
858 1095 - 1098 2016.5
Self-assembled honeycomb lattice in the monolayer of cyclic thiazyl diradical BDTDA with a zero-bias tunneling spectra anomaly Reviewed Major achievement
Scientific Reports 5 2015.12
Magnetic Response of Conductance Peak Structure in Junction-Confined Graphene Reviewed Major achievement
4 1138 - 1145 2012.2
Kohn Anomalies in Graphene Nanoribbons Reviewed Major achievement
80 1 - 11 2009.10
Control of Electric Current by Graphene Edge Structure Engineering Reviewed Major achievement
95 1 - 3 2009.8
Nearly Perfect Single-Channel Conduction in Disordered Armchair Nanoribbons Reviewed Major achievement
79 1 - 5 2009.3
Conduction Distribution in Disordered Quantum Wires with a Perfectly Conducting Channel Reviewed Major achievement
78 1 - 6 2009.3
A Three-Terminal Spin Filter Based on Spin-Orbit Coupling in the Presence of Anti-Dot Reviewed Major achievement
M. Yamamoto, B. Kramer
Journal of Physics: Conference Series 150 022102-1 - 4 2009.3
Edge Effect on Electronic Transport Properties of Graphene Nanoribbons and Presence of Perfectly Conducting Channel Reviewed Major achievement
47 124 - 137 2009.1
A Three-Terminal Spin Filter Induced by Spin-Orbit Interaction in the Presence of an Anti-Dot Reviewed Major achievement
103 1 - 6 2008.6
Spin-dependent electronic transport in nanowire in the presence of Rashba and Dresselhaus spin-orbit coupling Reviewed Major achievement
Ph.D Thesis (University of Hamburg) 2007.8
Spin Hall Current Induced by Electric Field Pulse Reviewed Major achievement
M. Yamamoto, B. Kramer
AIP Conference Proceedings 893 1265 - 1266 2007.5
Spin Polarization Induced by Rashba Spin-Orbit Coupling in Three Terminal Devices Reviewed Major achievement
M. Yamamoto, K. Dittmer, B. Kramer, T. Ohtsuki
Physica E 29 490 - 494 2006.5
Spin Polarization in a 3-terminal Conductor Induced by Rashba Spin-Orbit Coupling Reviewed Major achievement
M. Yamamoto, J.Ohe, T. Ohtsuki,J. Nitta, B. Kramer
Physica E 29 490 - 494 2005.11
Spin-Polarization in a T-shape Conductor Induced by Spin-Orbit Interaction Reviewed Major achievement
72 1 - 7 2005.9
Stern-Gerlach Spin Filter by Nonuniform Spin-Orbit Interaction Reviewed Major achievement
72 1 - 4 2005.7
Spin-Polarized Current Induced by Three Terminal Geometry Reviewed Major achievement
M. Yamamoto, J. Ohe, T. Ohtsuki
Physica E 22 430 - 433 2004.4
Conductance Fluctuations in the Presence of Spin Scattering Reviewed Major achievement
68 1 - 5 2003.10
Effect of Magnetic Field Applied on Leads Reviewed Major achievement
M. Yamamoto, T. Ohtsuki, K. Slevin
Journal of Physical Society of Japan 72 ( Supplement A ) 155 - 156 2003.2
4H-SiC紫外線アバランシェフォトダイオードの放射線劣化と故障メカニズム Major achievement
W. Zhen, C. Yu, M. Yamamoto, H. Guo, H. Ge
応用物理学会・先進パワー半導体分科会 第11回講演会 2024.11
電流拡散層と低抵抗層を有する4H-SiCトレンチMOSバリアショットキーダイオード Major achievement
H. Ge, W. Zhen, C. Yu, M. Yamamoto, W. Zhao, H. Guo, X. Wu
応用物理学会・先進パワー半導体分科会 第11回講演会 2024.11
1.1kV SiCサージ吸収アバランシェダイオードの試作と評価 Major achievement
小林良輔、中山浩二、黒岩丈晴、山本真幸、田中保宣
応用物理学会・先進パワー半導体分科会 第11回講演会 2024.11
プレーナ型SiC全周ゲート構造JFETの作製 Major achievement
雨宮貴紀、山本真幸、中山浩二、梅沢仁、黒岩丈晴、黒木伸一郎、田中保宣
応用物理学会・先進パワー半導体分科会 第11回講演会 2024.11
Fabrication of the planer SiC gate-all-around JFET with channel dose modulation International conference Major achievement
T. Amamiya, M. Yamamoto, H. Umezawa, K. Nakayama, T. Kuroiwa, S. Kuroki, Y. Tanaka
ICSCRM 2024 2024.10
サイドゲート型SiC JFETの耐放射線特性評価 Major achievement
小泉祐樹、飯酒盃知樹、武山昭憲、牧野高紘、大島武、梅沢仁、山本真幸、田中保宣
応用物理学会・先進パワー半導体分科会 第10回講演会 2023.11
Comparison of Si CMOS and SiC CMOS Operational Amplifiers International conference Major achievement
R. Kobayashi and M. Yamamoto
ICSCRM 2023 2023.9
Avalanche robustness investigation of SiC avalanche diodes at high temperatures International conference Major achievement
T. Sekiguchi, M. Mochizuki, M. Yamamoto, K. Nakayama and Y. Tanaka
ICSCRM 2022 2022.9
Thermal diffusion mechanism of Aluminum implanted in 4H-SiC International conference Major achievement
J. Shirai, K. Nakayama, M. Yamamoto, H. Umezawa, Y. Tanaka
DRIP XIX 2022.8
デバイスシミュレーションによるSiCサージ吸収素子の設計及び電力損失の評価 Major achievement
望月雅也，関口誉斗，山本真幸，中山浩二，田中保宣
令和４年度電気学会全国大会 2022.3
炭化珪素アバランシェダイオードによるスイッチング時のサージ抑制 Invited Major achievement
山本真幸
応用物理学会・先進パワー半導体分科会 第18回研究会 2021.5
Surge absorption by the 430V mesa-structured SiC avalanche diode International conference Major achievement
M. Yamamoto, K. Koseki, K. Nakayama, Y. Tanaka, S. Nishiyama
ISPSD 2020 2020.9
Enhancement of Surge-Suppression Performance of a Solid-State Snubber by a SiC Avalanche-Diode International conference Major achievement
APEC2020 2020.3
炭化珪素サージ吸収ダイオードの試作と評価 Major achievement
令和２年度電気学会全国大会 2020.3
Evaluation of Surge Reduction Performance of a SiC Avalanche Diode with Mesa Structure in a Switching Power Supply International conference Major achievement
K. Koseki, M. Yamamoto, and Y. Tanaka
ICSCRM 2019 2019.9
Failure Ayalysis of the SiC Clamp Diodes by 10kA/cm2 Avalanche Current International conference Major achievement
M. Yamamoto, K. Koseki, K. Nakayama, and Y. Tanaka
ICSCRM 2019 2019.9
Fabrication of a High-Voltage SiC Avalanche Diode with a Superior Voltage Clamp Property International conference Major achievement
M. Yamamoto, K. Koseki, Y. Tanaka
ISPSD 2019 2019.5
A study on fastening the switching speed for wide bandgap semiconductor based Super Cascode International conference Major achievement
X. Wang, M. Yamamoto
ECSCRM 2018 2018.9
Experimental Demonstration of SiC Screen GridVertical JFET (SiC-SGVJFET) Having a Ultra-Low Crss International conference Major achievement
K. Yano, T. Ishikawa, Y. Tanaka, T. Yatsuo, M. Yamamoto
ISPSD 2016 2016.6
Cascode Configuration of SiC-BGSIT and Si-MOSFET with Low On-Resistance and High Transconductance International conference Major achievement
M. Yamamoto,Y. Tanaka,T. Yatsuo,K. Yano
ICSCRM 2015 2015.10
電気の基礎 Major achievement
2024Year Type of subject：Professional education (undergraduate)
電気系エンジニアのための英語リテラシ Major achievement
2024Year Type of subject：Professional education (undergraduate)
Experiments of Applied Electrical Engineering Major achievement
2024Year Type of subject：Professional education (undergraduate)
Electric Laboratory I Major achievement
2024Year Type of subject：Professional education (undergraduate)
Advanced Electronic Device Engineering Major achievement
2024Year Type of subject：Master's (Graduate School)
電気電子工学基礎ゼミ
2023Year Type of subject：Professional education (undergraduate)
Electric Laboratory I
2023Year Type of subject：Professional education (undergraduate)
Advanced Electronic Device Engineering
2023Year Type of subject：Master's (Graduate School)
Calculus II
2023Year Type of subject：Professional education (undergraduate)
Experiments of Applied Electrical Engineering
2023Year Type of subject：Professional education (undergraduate)
基礎電気電子工学実験
2023Year Type of subject：Professional education (undergraduate)
電気系エンジニアのための英語リテラシ
2023Year Type of subject：Professional education (undergraduate)
