Updated on 2024/05/01

写真a

 
Matsumoto Takashi
 
Organization
Graduate Faculty of Interdisciplinary Research Faculty of Engineering Electrical and Electronic Information Engineering (Fuji Electric Power Device Course) Professor
Title
Professor
Contact information
メールアドレス

Research History

  • 山梨大学特任教授

    2013.4

  • 山梨大学名誉教授

    2012.4

  • 山梨大学教授

    1991.4

  • 山梨大学助教授

    1974.10

Education

  • The University of Tokyo

    - 1974.3

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    Country: Japan

  • The University of Tokyo

    - 1969.5

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    Country: Japan

Degree

  • 工学博士 ( 東京大学 )

Research Areas

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment  / Photo-electronic devices

  • Nanotechnology/Materials / Applied physical properties  / Epitaxial growth of compound semiconductors

  • Nanotechnology/Materials / Applied physical properties  / Semiconductor quantum structure

Subject of research

  • Quantum Structures of Magnetic Semiconductors

  • Electronic Properties of Oxide Semiconductors

  • Low Dimensional Quantum Structures of II-IV Semiconductors

  • Exciton transfer in semiconductor nanostructure

  • Electronic devices of oxide semiconductors

Papers

  • Leakage current analysis of silicon diode with anode activated by furnace annealing or laser annealing using deep level transient spectroscopy Reviewed

    Hiroki Wakimoto, Takashi,Matsumoto, Koji Yano, Tsutomu Muranaka

    2020.12

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Tunneling of spin polarized excitonsin ZnCdSe and ZnCdMnse coupled double quantum wells Reviewed

    Kenta Ohomori,Kazyki Kodama,Tsutomu Muranaka,Takashi Matsumoto

    Phys. Status Solidi C   7 ( 6 )   1642 - 1644   2010.6

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  • Structural and optical properties of ZnSe-based diluted magnetic semiconductor quantum-well wire arrays by wet chemical etching Reviewed

    Tsutomu Muranaka,Suguru Iizuka,Kazuki Kodama,Kenta Ohmori,Yoiichi Nabetani,Takashi Matsumoto

    Phys. Status Solidi C   7 ( 6 )   1648 - 1650   2010.6

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  • XRD characterization of ZnO layers grown on GaAs(111)B, c-plane and a-plane sapphire substrate by plasma-assisted MBE Reviewed

    Tsutomu Muranaka,Tastumi Sakano,Keiichi Mizuguchi,Yoichi Nabetani,Tetsuya Akitsu,Takashi Matsumoto,Shigeru Hagihara,Osamu Abe,Satoshi Hiraki,Yuichiro Fujukawa

    Phys. Status Solidi C   7 ( 6 )   1556 - 1558   2010.6

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  • Temperature dependence of the band gap of ZnSe1−xOx Reviewed

    Robert Broesler,Eugene E. Haller,Wladek Walukiewicz,Tsutomu Muranaka,Takashi Matsumoto,Yoichi Nabetani

    Appl. Phys. Lett., 95, 151907(1-3), (2009).   2009.10

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  • MBE growth and magneto-optical properties of ZnCdSe-ZnMnSe wire systems Reviewed

    Takashi Matsumoto,Kenta Omori,Kazuhito Nakamura,Tsutomu Muranaka,Yoichi Nabetani

    Physica status solidi (c)   6 ( 5 )   1339 - 1342   2009.5

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  • Electrical and Optical Properties of Ga-Doped ZnO Films Grown on Glass and Plastic Substrates by Using Plasma-Assisted Deposition Reviewed

    Tsutomu Muranaka,Akito Nishii,Taku Uehara,Tatsumi Sakano,Yoichi Nabetani,Tetsuya Akitsu,Takamasa Kato,Takashi Matsumoto,Shigeru Hagihara,Osamu Abe,Tetsu Hiraki,Yuichiro Fujikawa

    Journal of the Korean Physical Society   53 ( 5 )   2947 - 2950   2008.5

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  • Doping Profiles and Nanostructural Properties of Molecular-Beam-Deposited GZO Thin Films on Glass Substrates Reviewed

    Tsutomu Muranaka,Taku Uehara,Tatsumi Sakano,Yoichi Nabetani,Tetsuya Akitsu,Takamasa Kato,Takashi Matsumoto,Shigeru Hagihara,Osamu Abe,Tetsu Hiraki,Yuichiro Fujikawa

    Journal of the Korean Physical Society   53 ( 5 )   2897 - 2900   2008.5

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  • Magneto-Optical Properties of ZnMnSe-ZnSe-ZnCdSe Quantum Structures Reviewed

    Masahiro Ito,Takamasa Tajima,Kenta Omori,Tsutomu Muranaka,Yoichi Nabetani,Takamasa Kato,Takashi Matsumoto

    Journal of the Korean Physical Society   53 ( 5 )   2972 - 2975   2008.5

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  • Robustness of self-isolated high-voltage integrated circuit against the voltage surge during conductivity modulation delay in free-wheeling diode Reviewed

    T.Yamazaki,N.Kumagai,A.Nishiura,T.Fujihira,T.Matsumoto

    Jpn. J.Appl.Phys.   46 ( 2 )   569 - 571   2007.2

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  • Incorporation of P in CuInS2 using InP as a p-type dopant Reviewed

    T.Kato,H.Yamaguichi,T.Nakamura,Y.Nabetani,T.Matsumoto

    pss(c)   3   2606 - 2609   2006.11

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  • Low temperature growth of transparent conducting ZnO films by plasma assisted deposition, vol.203, 2887– 2890 (2006). Reviewed

    A. Nishii,T. Uehara,T. Sakano,Y. Nabetani,T. Akitsu,T. Kato,T. Matsumoto,S. Hagihara,O. Abe,S. Hiraki,Y. Fujikawa

    phys. stat. sol. (a)   203   2887 - 2890   2006.11

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  • Epitaxial growth and optical investigations of ZnTeO alloys Reviewed

    Y. Nabetani,T. Okuno,K. Aoki,T. Kato,T. Matsumoto,T. Hirai

    phys. stat. sol. (a)   203   2653 - 2657   2006.11

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  • High-voltage p-channel level shifter using charge-controlled self-isolation structureJJAP, 45,9A,6914-6916/(2006) Reviewed

    T.Yamazaki,N.Kumagai,A.Nishimura,T.Fujihira,Y.Seki,T.Matusmoto,

    JJAP   45 ( 9 )   6914 - 6916   2006.9

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  • Role of nitrogen precursor supplies on InAs quqntum dot surfaces in their emission wavelength Reviewed

    I. Suemune,G. Sasikala,H. Kumano,K. Uesugi,Y., Nabetani,T. Matsumoto,J. -T. Maeng,T. Y. Seong

    Jap.J.Appl.Phys.   45   L529 - L532   2006.5

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  • Photoluminescence properties of ZnTeO and ZnSeO alloys with dilute O concentrations Reviewed

    Y. Nabetani,T. Okuno,K. Aoki,T. Kato,T. Matsumoto他1名

    phys. stat. sol.(c)   3 ( 4 )   1078 - 1081   2006.5

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  • Composition control of ZnSSeO quaternary alloys grown on GaP Reviewed

    Y. Nabetani,Y. Ito,K. Kamisawa,T. Kato,T. Matsumoto他1名

    phys. stat. sol.(c)   3 ( 4 )   1082 - 1086   2006.5

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  • Characterization of MBE grown ZnO on GaAs (111) substrates Reviewed

    T. Matsumoto,K. Nishimura,A. Nishii,A. Ota,Y. Nabetani他1名

    phys. stat. sol.(c)   3 ( 4 )   984 - 987   2006.5

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  • Passivation of an isoelectronic impurity by atomic hydrogen: The case of ZnTe:O Reviewed

    Marco Felici,Antonio Polimeni,Mario Capizzi,Y. Nabetani,T. Okuno他4名

    Appl. Phys. Lett.   88   10191 - 987   2006.3

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  • Exerimental and numerical studies on dV/dt robustness of 1200V high-voltage integrated circuits using self-isolation structure Reviewed

    T.Yamazaki,S.Jimbo,N.Kumagai,A.Nishimura,T.Hujihira,Y.Seki,T.Matsumoto

    JJAP   45 ( 1 )   43 - 48   2006.1

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  • Experimental and numerical studies on dV/dt robustness of 1200V high-voltage integrated circuits using self-isolattion structure Reviewed

    T.Yamazaki,S.Jinbo,Y.Seki,T.Matsumoto,他3名

    Jpn.J.Appl.Phys.   45 ( 1A )   43 - 48   2006.1

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  • Exerimental and numerical studies on dV/dt robustness of 1200V high-voltage integrated circuits using self-isolation structure Reviewed

    T.Yamazaki,S.Jimbo,N.Kumagai,A.Nishimura,T.Hujihira,Y.Seki,T.Matsumoto

    JJAP   45 ( 1 )   43 - 48   2006.1

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  • Structural and luminescence properties of InAs quantum dots: Effect of nitrogen exposure on dot surfaces Reviewed

    G. Sasikala,I. Suemune,P. Thilakan,H. Kumano,K. Uesugi他3名

    Jpn. J. Appl. Phys.   44 ( 50 )   L1512 - L1515   2005.12

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  • Theory of strain states in InAs quantum dots and dependence on their capping layers Reviewed

    Y. Nabetani, T. Matsumoto, G. Sasikala, and I. Suemune

    J. Appl. Phys.   98 ( 6 )   6350 - 6350   2005.8

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  • Solution growth of CuGa1 xInxS2 by the temperature difference method under controlled S vapor pressure Reviewed

    T. Kato,T. Omata,T. Nakamura,D. Anno,Y. Nabetani他1名

    J. Crystal Growth   275   e531 - e536   2004.12

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  • Effect of lattice ionicity on hydrogen activity in II-VI materials containing isoelectronic impurities Reviewed

    M. Felici,V. Cesari,A. Polimeni,A. Frova,M. Capizzi他11名

    IEE Proc. -Optoelectron.   151   465 - 468   2004.10

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  • Improved luminescence efficiency of InAs quantum dots by nitrogen-induced strain compensation with GaNAs burying layers Reviewed

    I. Suemune,S. Ganapathy,H. Kumano,K. Uesugi,Y. Nabetani他1名

    Proc. of International Conference on Indium Phosphide and Related Materials   636 - 639   2004.7

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  • Temperature dependence and bowing of the bandgap in ZnSe1-xOx Reviewed

    A. Polimeni,M. Capizzi,Y. Nabetani,Y. Ito,T. Okuno他3名

    Appl. Phys. Lett.   84 ( 17 )   3304 - 3306   2004.4

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  • MBE growth and optical properties of ZnO on GaAs(111) substrates Reviewed

    T. Matsumoto,K. Nishimura,Y. Nabetani,T. Kato

    phys. stat. sol.(b)   241 ( 3 )   591 - 594   2004.2

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  • MBE growth of ZnSSeO alloy using ZnS as a sulfur source Reviewed

    Y. Nabetani,Y. Ito,T. Mukawa,T. Okuno,T. Kato他1名

    phys. stat. sol.(b)   241 ( 3 )   595 - 598   2004.2

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  • Improvement of InAs quantum-dot optical properties by strain compensation with GaNAs capping layers Reviewed

    X.Q. Zhang,S. Ganapathy,I. Suemune,H. Kumano,K. Uesugi他2名

    Appl. Phys. Lett.   83 ( 22 )   4524 - 4526   2003.12

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  • Luminescent properties of ZnCdSe/ZnMnSe superlattices Reviewed

    A. Fujita,A. Ota,K. Nakamura,Y. Nabetani,T. Kato他1名

    Materials Science in Semiconductor Processing   6 ( 5月6日 )   457 - 460   2003.12

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  • Theoretical analysis of microscopic strain distribution and phase stability of Zn chalcogenide alloys using valence force field model Reviewed

    Y. Ito,Y. Nabetani,T. Kato,T. Matsumoto

    Materials Science in Semiconductor Processing   6 ( 5月6日 )   409 - 412   2003.12

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  • Structure and optical properties of ZnSeO alloys with O composition up to 6.4% Reviewed

    Y. Nabetani,T. Mukawa,T. Okuno,Y. Ito,T. Kato他1名

    Materials Science in Semiconductor Processing   16 ( 5月6日 )   343 - 346   2003.12

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  • Epitaxial growth and large band-gap bowing of ZnSeO alloy Reviewed

    Y. Nabetani,T. Mukawa,Y. Ito,T. Matsumoto

    Appl. Phys. Lett.   83 ( 6 )   1148 - 1150   2003.8

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  • Effect of oxygen on the electronic band structure in ZnOxSe1-x alloys Reviewed

    W. Shan,W. Walukiewicz,J.W. Ager III,K.M. Yu,J. Wu他5名

    Appl. Phys. Lett.   83 ( 2 )   299 - 301   2003.7

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  • A Study on the short-circuit capability of field-stop IGBTs Reviewed

    M. Otsuki,Y. Onozawa,H. Kanemaru,Y. Seki,T. Matsumoto

    IEEE Trans. on Electron Devices   50   1525 - 1531   2003.6

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  • MBE growth and optical properties of ZnSeO Reviewed

    Y. Nabetani,T. Mukawa,Y. Ito,T. Kato,Matsumoto

    Proc. of 2002 MRS Fall Meeting   83 ( 2 )   299 - 301   2002.12

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  • High resolution transmission electron microscope analysis of CdSe/ZnSe strained layer superlattices grown on InP Reviewed

    Y. Nabetani,Y. Kobayashi,T. Kato,T. Matsumoto

    phys. stat. sol.(b)   229 ( 1 )   209 - 212   2002.4

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  • Structural properties of Cu(Ga1-xInx)ySz bulk alloys Reviewed

    T. Kato,S. Hayashi,T. Kiuchi,Y. Ishihara,Y. Nabetani他1名

    J. Crystal Growth   237-239 ( 2 )   2005 - 2008   2002.4

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  • HRTEM observationof CdSe/ZnSe SQWs grown on vicinal GaAs substrate Reviewed

    Y. Nabetani,Y. Kobayashi,T. Kato,T. Matsumoto

    J. Crystal Growth   237-239 ( 2 )   1541 - 1544   2002.4

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  • MBE growth of MnTe/ZnTe superlattices on GaAs(100) vicinal substrates Reviewed

    T. Suzuki,I. Ishibe,Y. Nabetani,T. Kato,T. Matsumoto

    J. Crystal Growth   237-239 ( 2 )   1374 - 1377   2002.4

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  • Arrangement of atoms and strain distribution in CdSe/ZnSe strained single quantum well on vicinal GaAs substrate Reviewed

    Y. Nabetani,T. Kato,T. Matsumoto

    J. Appl. Phys.   89 ( 1 )   154 - 159   2001.1

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  • Optical investigation of critical thickness and interface fluctuation in CdSe/ZnSe strained layer superlattices grown on InP Reviewed

    Y. Nabetani,I. Ishibe,K. Sugiyama,T. Kato,T. Matsumoto

    Jpn. J. Appl. Phys.   39 ( 5 )   2541 - 2545   2000.5

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  • Change in alloy composition in Cu(Ga1-xInx)ySz after CuI or Cu2S annealing Reviewed

    T. Kato,Y. Ishinara,Y. Nabetani,T. Matsumoto

    Jpn. J. Appl. Phys.   Jan-39   81 - 82   2000.1

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  • Epitaxial growth of ZnSe films on CuGaSe2 films Reviewed

    M. Tanaka,Y. Nabetani,T. Kato,T. Matsumoto

    Jpn. J. Appl. Phys.   Jan-39   218 - 219   2000.1

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  • X-ray diffraction and photoreflectance study of CuGaSe2 epitaxial layers Reviewed

    M. Tanaka,T. Kodama,Y. Nabetani,T. Kato,T. Matsumoto

    Jpn. J. Appl. Phys.   Jan-39   203 - 204   2000.1

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  • Lateral potential modulation by strain distribution in single quantum well grown on vicinal substrate: an approach to low dimensional quantum structure Reviewed

    Y. Nabetani, T. Kato, and T. Matsumoto

    Proc. of 2nd International Symposium on Blue Laser and Light Emitting Diodes   480 - 483   1998.9

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  • Optical properties of CdSe/ZnSe strained layer superlattices grown on InP Reviewed

    Y. Nabetani,T. Kato,T. Matsumoto

    Proc. of 2nd International Symposium on Blue Laser and Light Emitting Diodes   238 - 241   1998.9

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  • Growth of Cu-(Ga,In)-S system using temperature difference method under controlled S vapor pressure Reviewed

    T. Kato,T. Kiuchi,T. Matsumoto,Y. Nabetani

    Institute of Physics Conference Series   152   15 - 18   1998.1

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  • Iodide MBE of CuGaSe2 on GaAs(100) substrates Reviewed

    T. Kodama,Y. Nabetani,T. Kato,T. Matsumoto,Ueng Herng-Yih

    Institute of Physics Conference Series   152   273 - 276   1998.1

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  • Structure and PL properties of CdSe/ZnSe single quantum wells grown on vicinal GaAs substrates Reviewed

    Y. Nabetani,H. Abe,H. Takano,T. Kato,T. Matsumoto

    Nonlinear Optics   78 ( 2月4日 )   129 - 132   1997.8

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Books and Other Publications

  • 光・電磁物性

    ( Role: Joint Work)

    コロナ社  2006.10 

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    Language:Japanese   Book type:Scholarly book

  • 応用物性

    ( Role: Joint Work)

    オーム社  1991.2 

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    Language:Japanese   Book type:Scholarly book

Presentations

  • Roll-to-roll PAMBD法によるGZO透明導電膜の作製と評価

    第70回応用物理学会春季学術講演会  2023.3 

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    Event date: 2023.3

    Language:Japanese  

  • 光駆動 SiC カスコード スイッチによるハーフブリッジインバータ

    2022年電気学会産業応用部門大会  2022.8 

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    Event date: 2022.8

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  • プラズマ支援分子線堆積法よるフレキシブル基板上へのGZO透明導電膜の形成と評価(6)

    2021.3 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation(general)  

  • 局在準位を有する半導体ZnTeO 混晶の光導電性評価

    三枝 直樹,鍋谷 暢一,村中 司,松本 俊

    第58回応用物理学関係連合講演会  2011.3 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:神奈川  

  • シャッター制御による混晶組成制御と多重量子井戸構造の作製

    深澤左興,菱川正夫,岩崎文昭,輿石渓,米山貴裕,村中司,鍋谷暢一,松本俊

    第58回応用物理学関係連合講演会、神奈川  2011.3 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:神奈川  

  • Zn-Cd-Mn-Se 系DQWの光学的特性と構造評価(2)

    岩崎文昭,菱川正夫,深澤左興,米山貴裕,村中司,鍋谷暢一,松本俊

    第58回応用物理学関係連合講演会  2011.3 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:神奈川  

  • MBE成長したZnTeO混晶の構造および光学特性

    平松和也,鍋谷暢一,村中司,松本俊

    第58回応用物理学関係連合講演会、神奈川、、2011.3.27.  2011.3 

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    Event date: 2011.3

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  • 結合DQW構造におけるスピン偏極励起子発光の動特性

    菱川正夫,深澤左興,岩崎文昭,村中司,鍋谷暢一,松本俊

    第58回応用物理学関係連合講演会  2011.3 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:神奈川  

  • Zn(C6H15O3)2をZn原料として用いたZnOのMOVPE成長、

    小林哲也,加藤征己,鍋谷暢一,松本俊,村中司

    第58回応用物理学関係連合講演会  2011.3 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:神奈川  

  • ZnO-TFTのI-V特性と深い準位の測定

    榊原章剛,森雄大,佐野志保,堀井貴大,村中司,鍋谷暢一,松本俊

    多元系機能材料研究会2010年度講演会  2010.11 

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    Event date: 2010.11

    Language:Japanese   Presentation type:Other  

    Venue:習志野  

  • ZnCdse系DQWにおける励起子トンネリングと励起子相互作用

    菱川正夫,深澤左興,岩崎文昭,村中司,鍋谷暢一,松本俊

    多元系機能材料研究会2010年度講演会  2010.11 

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    Event date: 2010.11

    Language:Japanese   Presentation type:Other  

    Venue:習志野  

  • 原料交互供給によるZn-Cd-Mn-Se系ナノ構造の作製と評価

    深澤左興,菱川正夫,岩崎文昭,米山貴裕,村中司,鍋谷暢一,松本俊」

    多元系機能材料研究会2010年度講演会  2010.11 

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    Event date: 2010.11

    Language:Japanese   Presentation type:Other  

    Venue:習志野  

  • Electrical properties of Ga-doped ZnO transparent conducting films prepared at temperatures close to room temperature

    Takashi Matsumoto,Keiichi Mizuguchi,Takahiro Horii,Shiho Sano,Tsutomu Muranaka,Yoichi Nabetani,Satoshi Hiraki,H. Furukawa,A. Fukasawa,S. Sakamoto,S. Hagihara,H. kono,K. Kijima,O. Abe,K. Yashiro

    17th International Conference on Ternary and Multinary Compounds  2010.9 

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    Event date: 2010.9

    Language:English   Presentation type:Other  

    Venue:Baku, Azerbaijan  

  • Optical and structural properties of Zn-Cd-Mn-Se double quantum well systems

    Takashi Matsumoto,Kenta Ohmori,Kazuki Kodama,M.asao Hishikawa,Sakyo Fukasawa,Fumiaki Iwasaki,Tsutomu Muranaka,Yoichi Nabetani

    17th International Conference on Ternary and Multinary Compounds  2010.9 

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    Event date: 2010.9

    Language:English   Presentation type:Oral presentation(general)  

    Venue:Baku, Azerbaijan  

  • 希釈磁性半導体量子井戸の磁場依存近接場発光特性

    内山 和治,久保田悟,是沢太郎,櫻本泰浩,成瀬 誠,松本 俊,小林 潔,堀 裕和

    第71回応用物理学会学術講演会  2010.9 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:長崎  

  • 低温成長GaドープZnO薄膜(2)-X線回折特性-

    佐野志保,堀井貴大,村中司,鍋谷暢一,松本俊,平木哲,古川英明,深沢明広,坂本慎吾,荻原茂,河野裕,木島一広,安部治,八代浩二

    第71回応用物理学会学術講演会  2010.9 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:長崎  

  • Zn-Cd-Mn-Se系DQWの光学特性と構造評価

    岩崎文昭,菱川正夫,深澤左興,村中司,鍋谷暢一,松本俊

    第71回応用物理学会学術講演会  2010.9 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:長崎  

  • 低温成長GaドープZnO薄膜 (1) -電気的特性-

    堀井貴大,佐野志保,村中司,鍋谷暢一,松本俊,平木哲,古川英明,深沢明広,阪本慎吾,萩原茂,河野裕,木島一広,阿部治,八代浩

    第71回応用物理学会学術講演会,長崎,,2010.9.14.  2010.9 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:長崎  

  • 希釈磁性半導体量子井戸の磁場依存近接場発光特性

    内山 和治,久保田 悟,成瀬 誠,松本 俊,小林 潔,堀 裕和

    第19回ナノオプティクス研究討論会  2010.7 

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    Event date: 2010.7

    Language:Japanese   Presentation type:Oral presentation(general)  

  • プラズマ支援堆積法によるZnO透明導電膜の低温成長

    水口慶一,宮下祐司,堀井貴大,佐野志保,榊原章剛,村中司,鍋谷暢一,松本俊,平木哲,古川英明,深沢明広,阪本慎吾,萩原茂,河野裕,木島一広,阿部治,八代浩二

    多元系機能材料研究会年末講演会, P-14 (2009.12)  2009.12  応用物理学会

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    Event date: 2009.12

    Language:Japanese   Presentation type:Other  

    Venue:岡山  

  • Spin Polarized Exciton Transfer in ZnSe-based Coupled Quantum Wells,

    T. Matsumoto,K. Ohmori,K. Kodama,T. Muranaka,Y. Nabetani

    Japan-Korea Asian Core Program General Meeting on Interdisciplinary Science of Nanomaterials  2009.9 

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    Event date: 2009.9

    Language:English   Presentation type:Other  

    Venue:Sendai  

  • XRD characterization of ZnO layers grown on GaAs(111), sapphire c-plane and a-plane substrates by Plasma-Assisted MBE

    Tsutomu Muranaka,Tatsumi Sakano,Keiichi Mizuguchi,Yoichi Nabetani,Tetsuya Akitsu,Takashi Matsumoto,Shigeru Hagihara,Osamu Abe,Satoshi Hiraki,Yuichiro Fujikawa

    14th International Conference on II-VI Compounds, (2009, 8)  2009.8 

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    Event date: 2009.8

    Language:English   Presentation type:Other  

    Venue:St.Petersburg, Russia  

  • MOVPE growth of ZnO using Zn(C9H15O3)2 as a Zn source

    Yoichi Nabetani,Ikuo Hatanaka,Tetsuya Kobayashi,Tsutomu Muranaka,Takamasa Kato,Takashi Matsumoto

    14th International Conference on II-VI Compounds, (2009, 8)  2009.8 

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    Event date: 2009.8

    Language:English   Presentation type:Other  

    Venue:St.Petersburg, Russia  

  • Epitaxial growth and characterization of ZnSTeO quaternary alloys

    Yoichi Nabetani,Kazuaki Gemma,Tsutomu Muranaka,Takamasa Kato,Takashi Matsumoto

    14th International Conference on II-VI Compounds, (2009, 8)  2009.8 

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    Event date: 2009.8

    Language:English   Presentation type:Other  

    Venue:St.Petersburg, Russia  

  • Tunneling of spin polarized excitons in ZnCdSe and ZnCdMnSe coupled double quantum wells

    Kenta Ohmori,Kazuki Kodama,Tsutomu Muranaka,Yoichi Nabetani,Takashi Matsumoto

    14th International Conference on II-VI Compounds, (2009, 8)  2009.8 

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    Event date: 2009.8

    Language:English   Presentation type:Other  

    Venue:St.Petersburg, Russia  

  • Photoluminescence in ZnSe-based diluted magnetic semiconductor quantum well wire structures formed by wet chemical etching

    Tsutomu Muranaka,Suguru Iizuka,Kazuki Kodama,Kenta Ohmori,Yoichi Nabetani,Takashi Matsumoto

    14th International Conference on II-VI Compounds  2009.8 

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    Event date: 2009.8

    Language:English   Presentation type:Other  

    Venue:St.Petersburg, Russia  

  • 結合の強さに依存したZn-Cd-Mn-Se系DQWの励起子トンネリング

    菱川正夫,大森健太,児玉和樹,深澤左興,村中司,鍋谷暢一,松本俊

    第56回応用物理学関係連合講演会  2009.3 

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    Event date: 2009.3

    Language:Japanese   Presentation type:Other  

  • 化学エッチングにより形成したZnSe系希薄磁性半導体細線アレイの光学特性

    飯塚傑,杉本一馬,児玉和樹,大森健太,村中司,鍋谷暢一,松本俊

    第56回応用物理学関係連合講演会  2009.3 

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    Event date: 2009.3

    Language:Japanese   Presentation type:Oral presentation(general)  

  • Zn-Mn-Cd-Se系2重量子井戸の構造評価

    深澤左興,菱川正夫,児玉和樹,大森健太,村中司,鍋谷暢一,松本俊

    第56回応用物理学関係連合講演会  2009.3 

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    Event date: 2009.3

    Language:Japanese   Presentation type:Oral presentation(general)  

  • GaAs加工基板上へのZnSe系量子ナノ構造のMBE成長

    村中司,飯塚傑,杉本一馬,児玉和樹,大森健太,鍋谷暢一,松本俊

    第56回応用物理学関係連合講演会  2009.3 

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    Event date: 2009.3

    Language:Japanese   Presentation type:Oral presentation(general)  

  • Zn(C9H15O3)2を原料としたZnO のサファイア基板上へのMOVPE成長

    畠中郁夫,小林哲也,鍋谷暢一,松本俊,村中司

    応用物理学会結晶工学分科会年末講演会, 22 (2008.12)  2008.12 

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    Event date: 2008.12

    Language:Japanese   Presentation type:Other  

  • Zn-Cd-Mn-Se 系結合DQW構造の励起子トンネリング

    大森健太,児玉和樹,菱川正夫,深澤左興,村中司,鍋谷暢一,松本俊

    多元系機能材料研究会年末講演会, O-6 (2008.11)  2008.11 

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    Event date: 2008.11

    Language:Japanese   Presentation type:Oral presentation(general)  

  • プラズマ支援堆積法による大面積ZnO透明導電膜

    水口慶一,秋山太幸,原澤哲也,榊原章剛,村中司,鍋谷暢一,秋津哲也,松本俊,平木哲,藤川雄一郎,萩原茂,河野裕,木島一広,阿部治,八代浩二

    多元系機能材料研究会年末講演会  2008.11 

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    Event date: 2008.11

    Language:Japanese   Presentation type:Other  

  • MBE growth and magneto-optical properties of ZnCdSe-ZnMnSe wire systems Berlin, 128 (2008.9)

    Takashi Matsumoto,Kenta Omori,Kazuhito Nakamura,Tsutomu Muranaka,Yoichi Nabetani

    16th International Conference on Ternary and Multinary Compounds  2008.9 

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    Event date: 2008.9

    Language:English   Presentation type:Other  

  • ZnSe系結合DQW構造のXRD

    児玉和樹,大森健太,深澤左興,村中司,鍋谷暢一,松本俊

    第69回応用物理学会学術講演会  2008.9 

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    Event date: 2008.9

    Language:Japanese   Presentation type:Oral presentation(general)  

  • 磁性/非磁性結合DQWの井戸間相互作用

    大森健太,児玉和樹,村中司,鍋谷暢一,松本俊

    第68回応用物理学会学術講演会, (2008.9)  2008.9 

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    Event date: 2008.9

    Language:Japanese   Presentation type:Oral presentation(general)  

  • ZnCdSe-ZnMnSe細線系のMBE成長と磁気光学特性

    大森健太,中村和史,村中司,鍋谷暢一,松本俊

    応用物理学会多元系機能材料研究会『ICTMC-16に向けた研究討論会』  2008.8 

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    Event date: 2008.8

    Language:Japanese   Presentation type:Oral presentation(general)  

  • Temperature Lowering Condition and Annealing Effects on MOCVD-Grown ZnO Using Zn-MOPD (Zn(C9H15O3)2)

    Ikuo Hatanaka,Yoichi Nabetani,Takashi Matsumoto,Takamasa Kato,Tsutomu Muranaka,Tooru Hirai,27th Electronic Materials Symposium, L6 (2008, 7)

    27th Electronic Materials Symposium  2008.7 

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    Event date: 2008.7

    Language:English   Presentation type:Other  

  • Growth and Characterization of Ga-Doped ZnO Thin Films by Plasma-Assisted Molecular Beam Deposition

    Tsutomu Muranaka,Tatsumi Sakano,Taku Uehara,Yoichi Nabetani,Tetsuya Akitsu,Takamasa Kato,Takashi Matsumoto,Shigeru Hagihara,Osamu Abe,Tetsu Hiraki,Yuichiro Fujikawa

    Tsutomu Muranaka, Tatsumi Sakano, Taku Uehara, Yoichi Nabetani, Tetsuya Akitsu, Takamasa Kato, Takashi Matsumoto, Shigeru Hagihara, Osamu Abe, Tetsu Hiraki and Yuichiro Fujikawa  2008.7 

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    Event date: 2008.7

    Language:English   Presentation type:Other  

    Venue:27th Electronic Materials Symposium  

  • MBE growth and optical properties of ZnSe based DMS nanostructrues Major achievement

    T.Matsumoto

    Asia Core Workshop on Wide band gap Semiconductors, Seoul  2008.2  KOSEF,JSAP

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    Event date: 2008.2

    Language:English   Presentation type:Oral presentation(invited, special)  

    Venue:Seoul  

  • Magneto-Optical Properties of ZnMnSe-ZnSe-ZnCdSe Quantum Structures Major achievement

    M. Ito,T. Muranaka,Y. Nabetani,T. Kato,T. Matsumoto 他2名

    13th International Conference on II-VI Compounds  2007.9 

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    Event date: 2007.9

    Language:English   Presentation type:Other  

  • Doping Profiles and Nanostructural Properties of Molecular Beam Deposited GZO Thin Films on Glass Substrates Major achievement

    T. Muranaka,T. Uehara,T. Sakano,Y. Nabetani,T. Matsumoto 他6名

    13th International Conference on II-VI Compounds  2007.9 

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    Event date: 2007.9

    Language:English   Presentation type:Oral presentation(general)  

  • Low temperature growth of transparent conducting ZnO films by plasma assisted deposition Major achievement

    A.Nishi,T.Uehara,Y.Nabetani,T.Akitsu,T.Matsumoto,他6名

    15th International Conference on Ternary and Multinary Compounds  2006.3 

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    Event date: 2006.3

    Language:English   Presentation type:Other  

    Venue:Kyoto  

  • Characterization of MBE grown ZnO on GaAs(111) substrates

    T.Matsumoto,K.Nishimura,A.Nishii,A.Ota,Y.Nabetani

    12th International Conference on II-VI Compounds  2005.9 

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    Event date: 2005.9

    Language:English   Presentation type:Other  

    Venue:Warsaw  

  • Optical properties of ZnMnSe heteroepitaxial layers Major achievement

    T.Matsumoto,A.Ota,K.Nakamura,A.Fujita,Y.Nabetani,T.kato

    11th Interanational Conference on II-VI Compounds  2003.9 

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    Event date: 2003.9

    Language:English   Presentation type:Other  

    Venue:Nigara Falls  

  • MBE growth and optical properties of ZnO on GaAs(111) substrates Major achievement

    T.Matsumoto,K.Nishimura,Y.Nabetani,T.Kato

    11th Interanational Conference on II-VI Compounds  2003.9 

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    Event date: 2003.9

    Language:English   Presentation type:Oral presentation(general)  

    Venue:Nigara Falls  

  • Plasma assisted MBE growth and Characterization of hexagonal ZnO on GaAs(111) substrates

    T.Matudsmoto,Y.Nabetani,C.Ando,H.Kinno,T.Kato,他3名

    1st Asia -Pacific Wowk Shdp on Widegap Semoconductors  2003.3 

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    Event date: 2003.3

    Language:English   Presentation type:Oral presentation(general)  

    Venue:Awaji  

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Industrial Property Rights

  • 酸化亜鉛薄膜の製造方法及び製造装置

    松本俊,今津千竹,萩原茂,平木哲,藤川雄一郎,他2名

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    Applicant:国立大学法人山梨大学

    Application no:2005-237141  Date applied:2005.8

    Country of applicant:Foreign country  

Teaching Experience (On-campus)

  • Advanced Power Semiconductor Modules Engineering

    2023Year

Professional Memberships

  • 応用物理学会

  • 電子情報通信学会

  • 日本結晶成長学会