Updated on 2024/06/30

写真a

 
Nabetani Yoichi
 
Organization
Graduate Faculty of Interdisciplinary Research Faculty of Engineering Electrical and Electronic Information Engineering (Electronics and Electrical Engineering) Professor
Title
Professor
Contact information
メールアドレス

Research History

  • 山梨大学教授(大学院医学工学総合研究部)

    2016.4

  • 山梨大学准教授(大学院医学工学総合研究部)

    2007.4

  • 山梨大学助教授(大学院医学工学総合研究部)

    2003.8

  • 山梨大学助教授(大学院医学工学総合研究部)

    2003.8

  • 山梨大学助手(工学部)

    1996.4

  • University of Yamanashi

    1996.4

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Education

  • Kyoto University

    - 1996.3

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    Country: Japan

  • Kyoto University   Graduate School, Division of Engineering

    - 1996

  • 京都大学大学院

    - 1996

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    Country: Japan

  • Kyoto University

    - 1993.3

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    Country: Japan

  • 京都大学大学院

    - 1993

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    Country: Japan

  • Doshisha University

    - 1991.3

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    Country: Japan

  • Doshisha University   Faculty of Engineering

    - 1991

  • Doshisha University

    - 1991

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    Country: Japan

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Degree

  • 博士(工学) ( 1996.3   京都大学 )

  • 修士(工学) ( 1993.2   京都大学 )

Research Areas

  • Nanotechnology/Materials / Applied physical properties  / quantum structure

  • Nanotechnology/Materials / Crystal engineering

  • Nanotechnology/Materials / Applied physical properties

Research Interests

  • Quantum Structure

  • Lattice Strain

  • Crystal Growth

  • Epitaxial growth

  • 量子構造

  • 結晶成長

  • 格子歪

  • 応用物性・結晶工学

  • エピタキシャル成長

  • quantum structure

  • Lattice Strain

  • epitaxial growth

  • Electronic Material Engineering

  • Crystal Growth

Subject of research

  • high-efficiency solar cell

  • Semiconducting Optical Devices

  • transparent semiconductor

  • Lattice-Mismatched Heteroepitaxy

Research Projects

  • Broad range tunable semiconductor

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    Grant type:Competitive 

  • 高効率太陽電池

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    Grant type:Competitive 

  • 透明半導体

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    Grant type:Competitive 

  • 格子不整合へテロエピタキシー

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    Grant type:Competitive 

  • 半導体光デバイス

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    Grant type:Competitive 

  • transparent semiconductor

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    Grant type:Competitive 

  • Semiconducting Optical Devices

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    Grant type:Competitive 

  • Low dimensional Quantum Structures by Semiconductor Crystals

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    Grant type:Competitive 

  • Lattice-Mismatched Heteroepitaxy

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    Grant type:Competitive 

  • high-efficiency solar cell

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    Grant type:Competitive 

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Papers

  • パワーモジュールの絶縁基板における三重点の電界強度と絶縁破壊電圧に関する研究 Reviewed

    堀 元人, 池田 良成, 山崎 智幸, 村中 司, 鍋谷 暢一

    エレクトロニクス実装学会誌   26 ( 1 )   167 - 171   2023.1( ISSN:1884-121X )

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    Authorship:Last author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:エレクトロニクス実装学会  

  • Minimizing Thermal Imbalance of RC-IGBT by Bonding Technology Reviewed

    IEEJ Journal of Industry Applications   11 ( 6 )   771 - 778   2022.7( ISSN:21871108 )

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1541/ieejjia.21014496

  • パワーモジュールの絶縁基板における電界強度分布と絶縁破壊箇所の関係 Reviewed

    堀元人, 谷口克己,日向裕一朗,齊藤まい,池田良成,山崎智幸,村中司,鍋谷暢一

    電気学会論文誌A   142 ( 7 )   328 - 334   2022.7( ISSN:1881-4190 )

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    Authorship:Last author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:電気学会  

    DOI: 10.1541/ieejfms.142.321

  • RC-IGBT非動作領域の冷却効果による熱抵抗の改善 Reviewed

    仲野 逸人, 村中 司, 鍋谷 暢一

    電気学会論文誌D   141 ( 11 )   889 - 894   2021.11( ISSN:1881-4190 )

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    Authorship:Last author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:電気学会  

    DOI: 10.154/ieejias.141.889

  • Highly stable semi-transparent MAPbI(3) perovskite solar cells with operational output for 4000 h Reviewed

    Md. Bodiul Islam, Masatoshi Yanagida, Yasuhiro Shirai, Yoichi Nabetani, and Kenjiro Miyano

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   195   323 - 329   2019.6( ISSN:0927-0248 )

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.solmat.2019.03.004

  • Deep level transient spectroscopic analysis of p/n junction implanted with boron in n-type silicon substrate Reviewed

    H. Wakimoto, H. Nakazawa, T. Matsumoto, and Y. Nabetani

    JOURNAL OF APPLIED PHYSICS   123 ( 16 )   2018.4( ISSN:0021-8979 )

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5011229

  • NiOx Hole Transport Layer for Perovskite Solar Cells with Improved Stability and Reproducibility

    Md. Bodiul Islam, Masatoshi Yanagida, Yasuhiro Shirai, Yoichi Nabetani, and Kenjiro Miyano

    ACS OMEGA   2   2291 - 2299   2017.5

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    Authorship:Corresponding author   Language:English  

  • Effects of band anticrossing on the temperature dependence of the band gap of ZnSe1-xOx alloys Reviewed

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   32 ( 1 )   2016.12

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6641/32/1/015005

  • Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides Reviewed

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   30 ( 8 )   08501 - 08501   2015.8

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    Authorship:Corresponding author   Language:English  

    DOI: 10.1088/0268-1242/30/8/085018

  • Band anticrossing in ZnOSe highly mismatched alloy Reviewed

    Applied Physics Express   7 ( 7 )   2014.7

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  • Room-temperature formation of a ZnO-based adhesion layer for nanoprecision Cu/Glass metallization Reviewed

    Japanese Journal of Applied Physics   52   05FB0   2013.5

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  • Optical and Structural Properties of Zn–Cd–Mn–Se Double Quantum Well Systems Reviewed

    T. Matsumoto,K. Ohmori,K. Kodama,M. Hishikawa,S. Fukasawa,F. Iwasaki,T. Muranaka,Y. Nabetani

    Japanese Journal of Applied Physics   50   2011.6

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  • Effects of Ga Doping and Substrate Temperature on Electrical Properties of ZnO Transparent Conducting Films Grown by Plasma-Assisted Deposition Reviewed

    T. Matsumoto,K. Mizuguchi,T. Horii,S. Sano,T. Muranaka,Y. Nabetani,S. Hiraki,H. Furukawa,A. Fukasawa,S. Sakamoto,S. Hagihara,H. Kono,K. Kijima,O. Abe,K. Yashiro

    Japanese Journal of Applied Physics   50   05FB1   2011.6

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  • Temperature dependence of the band gap of ZnSe1−xOx Reviewed

    R. Broesler,E. E. Haller,W. Walukiewicz,T. Muranaka,T. Matsumoto,Y. Nabetani

    Applied Physics Letters   95   2009.10

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  • Growth of Ge and P codoped p-type CuInS2 bulk crystals Reviewed

    Takamasa Kato,Hiroshi Yamaguchi,Tsutomu Muranaka,Yoichi Nabetani,Takashi Matsumoto

    Physica Status Solidi C   5 ( 6 )   1034 - 1037   2009.5

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  • Dependence of In2Se3 crystal structures grown on GaAs(001) substrates on growth temperature and V/III ratio Reviewed

    J. Crystal Growth   311 ( 3 )   847 - 850   2009.1

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  • Doping Profiles and Nanostructural Properties of Molecular-Beam-Deposited GZO Thin Films on Glass Substrates Reviewed

    T. Muranaka, T. Uehara, T. Sakano, Y. Nabetani, T. Akitsu, T. Kato, T. Matsumoto, S. Hagihara, O. Abe, S. Hiraki, Y. Fujikawa

    JOURNAL OF THE KOREAN PHYSICAL SOCIETY   53 ( 5 )   2897 - 2900   2008.11( ISSN:0374-4884 )

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    Language:English   Publishing type:Research paper (international conference proceedings)   Publisher:KOREAN PHYSICAL SOC  

    Ga-doped zinc-oxide (GZO) films grown at various Ga/Zn supply ratios were prepared on glass substrates by using plasma-assisted molecular beam deposition. The films were carefully characterized by using Hall, X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements. At low Ca/Zn supply ratios, the carrier density systematically increased with increasing Ga/Zn supply ratio. However, a saturation of the carrier density near 4 - 6 x 10(20) cm(-3) was observed when the Ga/Zn supply ratio was in the range from 5 x 10(-5) % to 0.5 %. From TEM observations, uniform crystal grains were observed to grow with low-angle tilt grain boundaries in GZO films with low doping. On the other hand, high-angle tilt grain boundaries were observed in the highly-doped GZO films. A detailed selected area electron diffraction (SAED) analysis revealed that such non-uniformity in the highly-doped GZO films appears during the initial growth stage.

    Web of Science

  • Deposition of zinc oxide thin films in supercritical carbon dioxide solutions

    Eiichi Kondoh, Kenji Sasaki, Yoichi Nabetani

    APPLIED PHYSICS EXPRESS   1 ( 6 )   06120-06120   2008.6( ISSN:1882-0778 )

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:JAPAN SOC APPLIED PHYSICS  

    This article reports the deposition of ZnO thin films in supercritical CO(2) solutions likely for the first time. Zincacetylacetonate was dissolved in supercritical CO(2), together with oxygen, and was processed at 8-13 MPa and 230-380 degrees C. Continuous crystalline films were obtained on Si and sapphire at temperatures higher than 280 degrees C. The-band-edge emission at 370 nm was confirmed in photoluminescence spectra. (C) 2008 The Japan Society of Applied Physics.

    DOI: 10.1143/APEX.1.061201

    Web of Science

  • Deposition of Zinc Oxide Thin Films in Supercritical Carbon Dioxide Solutions Reviewed

    E. Kondoh, K. Sasaki, Y. Nabetani

    Applied Physics Express   1   06120 - 06120   2008.5

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  • Magneto-Optical Properties of ZnMnSe-ZnSe-ZnCdSe Quantum Structures Reviewed

    Masahiro Ito,Takamasa Tajima,Kenta Omori,Tsutomu Muranaka,Yoichi Nabetani,Takamasa Kato,Takashi Matsumoto

    Journal of the Korean Physical Society   53 ( 5 )   2972 - 2975   2008.5

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  • Electrical and Optical Properties of Ga-Doped ZnO Films Grown on Glass and Plastic Substrates by Using Plasma-Assisted Deposition Reviewed

    Tsutomu Muranaka,Akito Nishii,Taku Uehara,Tatsumi Sakano,Yoichi Nabetani,Tetsuya Akitsu,Takamasa Kato,Takashi Matsumoto,Shigeru Hagihara,Osamu Abe,Tetsu Hiraki,Yuichiro Fujikawa

    Journal of the Korean Physical Society   53 ( 5 )   2947 - 2950   2008.5

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  • Doping Profiles and Nanostructural Properties of Molecular-Beam-Deposited GZO Thin Films on Glass Substrates Reviewed

    Tsutomu Muranaka,Taku Uehara,Tatsumi Sakano,Yoichi Nabetani,Tetsuya Akitsu,Takamasa Kato,Takashi Matsumoto,Shigeru Hagihara,Osamu Abe,Tetsu Hiraki,Yuichiro Fujikawa

    Journal of the Korean Physical Society   53 ( 5 )   2897 - 2900   2008.5

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  • X-ray absorption and diffraction study of II–VI dilute oxide semiconductor alloy epilayers Reviewed

    F.Boscherini, M. Malvestuto, G. Ciatto, F. D'Acapito, G. Bisognin, D. De Salvador, M. Berti, M. Felici, A. Polimeni, Y. Nabetani

    Journal of Physics: Condensed Matter   19 ( 44 )   44620 - 44620   2007.11

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  • Incorporation of P in CuInS2 using InP as a p-type dopant Reviewed

    T. Kato, H. Yamaguchi, T. Nakamura, Y. Nabetani, T. Matsumoto

    phys. stat. sol.(c)   3 ( 8 )   2606 - 2609   2006.9

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  • Epitaxial growth and optical investigations of ZnTeO alloys Reviewed

    Y. Nabetani, T. Okuno, K. Aoki, T. Kato, T. Matsumoto, T. Hirai

    phys. stat. sol.(a)   203 ( 11 )   2653 - 2890   2006.9

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  • Low temperature growth of transparent conducting ZnO films by plasma assisted deposition Reviewed

    A. Nishii, T. Uehara, T. Sakano, Y. Nabetani, T. Akitsu, T. Kato, 他5名

    phys. stat. sol.(a)   203 ( 11 )   2887 - 2890   2006.9

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  • Role of nitrogen precursor supplies on InAs quqntum dot surfaces in their emission wavelength Reviewed

    I. Suemune, G. Sasikala, H. Kumano, K. Uesugi, Y., Nabetani, T. Matsumoto, 他3名

    Jpn. J. Appl. Phys.   45 ( 21 )   L529 - L532   2006.5

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  • Photoluminescence properties of ZnTeO and ZnSeO alloys with dilute O concentrations Reviewed

    Y. Nabetani,T. Okuno,K. Aoki,T. Kato,T. Matsumoto他1名

    phys. stat. sol.(c)   3 ( 4 )   1078 - 1081   2006.5

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  • Characterization of MBE grown ZnO on GaAs (111) substrates Reviewed

    T. Matsumoto,K. Nishimura,A. Nishii,A. Ota,Y. Nabetani他1名

    phys. stat. sol.(c)   3 ( 4 )   984 - 987   2006.5

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  • Composition control of ZnSSeO quaternary alloys grown on GaP Reviewed

    Y. Nabetani,Y. Ito,K. Kamisawa,T. Kato,T. Matsumoto他1名

    phys. stat. sol.(c)   3 ( 4 )   1082 - 1086   2006.5

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  • Passivation of an isoelectronic impurity by atomic hydrogen: The case of ZnTe:O Reviewed

    Marco Felici,Antonio Polimeni,Mario Capizzi,Y. Nabetani,T. Okuno他4名

    Appl. Phys. Lett.   88   10191   2006.3

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  • Characterization of MBE grown ZnO on GaAs(111) substrates Major achievement

    T Matsumoto, K Nishimura, A Nishii, A Ota, Y Nabetani, T Kato

    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4   3 ( 4 )   984 - +   2006( ISSN:1862-6351 )

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:WILEY-VCH, INC  

    ZnO epitaxial layers grown on GaAs(111)B substrates by plasma assisted MBE with different O/Zn flux ratios are characterized by photoluminescence (PL), X-ray diffraction (XRD) theta-2 theta scan, omega scan, and reciprocal lattice mapping. Low temperature PL spectra are dominated by bound exciton bands at 3.360 eV and 3.330 eV. The 3.360 eV band is strong in samples grown under Zn-rich cindition and the 3.330 eV band is strong in samples grown under O-rich condition. The epitaxial orientation relationship is ZnO(0001)//GaAs(111) and ZnO[11-20]//GaAs [01-1] irrespective of the O/Zn flux ratio. The ZnO c-axis tilts by 0.2 degrees similar to 0.3 degrees firom the GaAs [111] axis toward < 1-10 > or < 2-1-1 > direction. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

    DOI: 10.1002/pssc.200564645

    Web of Science

  • Composition control of ZnSSeO quaternary alloys grown on GaP Major achievement

    Y Nabetani, Y Ito, K Kamisawa, T Kato, T Matsumoto, T Hirai

    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4   3 ( 4 )   1082 - +   2006( ISSN:1862-6351 )

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:WILEY-VCH, INC  

    ZnSSeO quaternary alloys were grown on GaP substrates by molecular beam epitaxy and the group VI compositions were controlled. Reductions of the supply amounts of Se and S both increase the O concentration. S concentration were decreased by the decrease of S supply and increased by the decrease of Se supply. ZnSSeO alloys lattice-matched to GaP were obtained with high O and S concentrations. Dominant peaks were observed at the near band edge in the photoluminescence spectra. The band gap energies were shifted according to the group VI compositions. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

    DOI: 10.1002/pssc.200564698

    Web of Science

  • Structural and luminescence properties of InAs quantum dots: Effect of nitrogen exposure on dot surfaces Reviewed

    G. Sasikala,I. Suemune,P. Thilakan,H. Kumano,K. Uesugi他3名

    Jpn. J. Appl. Phys.   44 ( 50 )   L1512 - L1515   2005.12

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  • Theory of strain states in InAs quantum dots and dependence on their capping layers Reviewed

    Y. Nabetani, T. Matsumoto, G. Sasikala, and I. Suemune

    J. Appl. Phys.   98 ( 6 )   06350 - 06350   2005.8

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  • Effect of oxygen on the electronic band structure of II-O-VI alloys Reviewed

    W. Shan,W. Walukiewicz,K.M. Yu,J.W. Ager III,J. Wu他6名

    Proc. of SPIE-The International Society for Optical Engineering   5439   426 - 434   2005.1

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  • Solution growth of CuGa1 xInxS2 by the temperature difference method under controlled S vapor pressure Reviewed

    T. Kato,T. Omata,T. Nakamura,D. Anno,Y. Nabetani他1名

    J. Crystal Growth   275   e531 - e536   2004.12

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  • Effect of lattice ionicity on hydrogen activity in II-VI materials containing isoelectronic impurities Reviewed

    M. Felici,V. Cesari,A. Polimeni,A. Frova,M. Capizzi他11名

    IEE Proc. -Optoelectron.   151   465 - 468   2004.10

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  • Effect of lattice ionicity on hydrogen activity in II-VI materials containing isoelectronic oxygen impurities Reviewed Major achievement

    M Felici, Cesari, V, A Polimeni, A Frova, M Capizzi, YD Choi, BOYM Yu, Y Nabetani, Y Ito, T Okuno, T Kato, T Matsumoto, T Hirai, IK Sou, WK Ge

    IEE PROCEEDINGS-OPTOELECTRONICS   151 ( 5 )   465 - 468   2004.10( ISSN:1350-2433 )

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    Language:English   Publishing type:Research paper (international conference proceedings)   Publisher:IEE-INST ELEC ENG  

    The authors studied the effect of hydrogen irradiation on the optical properties of ZnTe, ZnTe1-ySy (y = 0.015) and ZnSe1-xOx (x = 0.0023, 0.0057 and 0.009) epilayers. Photoluminescence measurements show the full passivation of O-related recombination bands in ZnTe and ZnTe0.985S0.015 samples unintentionally doped with oxygen. However, hydrogen irradiation does not affect the bandgap reduction following 0 incorporation in ZnSe1-xOx alloys. This lack of interaction between O and H in ZnSe1-xOx points toward a scarce localised character in the ZnSe1-xOx band edges, as supported by the study of the temperature dependence of the ZnSe1-xOx bandgap.

    DOI: 10.1049/ip-opt:20040912

    Web of Science

  • Improved luminescence efficiency of InAs quantum dots by nitrogen-induced strain compensation with GaNAs burying layers Reviewed

    I. Suemune,S. Ganapathy,H. Kumano,K. Uesugi,Y. Nabetani他1名

    Proc. of International Conference on Indium Phosphide and Related Materials   636 - 639   2004.7

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  • Temperature dependence and bowing of the bandgap in ZnSe1-xOx Reviewed

    A. Polimeni,M. Capizzi,Y. Nabetani,Y. Ito,T. Okuno他3名

    Appl. Phys. Lett.   84 ( 17 )   3304 - 3306   2004.4

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  • Oxygen induced band-gap reduction in ZnOxSe1-x alloys Reviewed

    W. Shan,W. Walukiewicz,J.W. Ager III,K.M. Yu,J. Wu他2名

    phys. stat. sol.(b)   241 ( 3 )   603 - 606   2004.2

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  • MBE growth and optical properties of ZnO on GaAs(111) substrates Reviewed

    T. Matsumoto,K. Nishimura,Y. Nabetani,T. Kato

    phys. stat. sol.(b)   241 ( 3 )   591 - 594   2004.2

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  • MBE growth of ZnSSeO alloy using ZnS as a sulfur source Reviewed

    Y. Nabetani,Y. Ito,T. Mukawa,T. Okuno,T. Kato他1名

    phys. stat. sol.(b)   241 ( 3 )   595 - 598   2004.2

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  • Structure and optical properties of ZnSeO alloys with O composition up to 6.4% Reviewed

    Y. Nabetani,T. Mukawa,T. Okuno,Y. Ito,T. Kato他1名

    Materials Science in Semiconductor Processing   16 ( 5-6 )   343 - 346   2003.12

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  • Improvement of InAs quantum-dot optical properties by strain compensation with GaNAs capping layers Reviewed

    X.Q. Zhang,S. Ganapathy,I. Suemune,H. Kumano,K. Uesugi他2名

    Appl. Phys. Lett.   83 ( 22 )   4524 - 4526   2003.12

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  • Theoretical analysis of microscopic strain distribution and phase stability of Zn chalcogenide alloys using valence force field model Reviewed

    Y. Ito,Y. Nabetani,T. Kato,T. Matsumoto

    Materials Science in Semiconductor Processing   6 ( 5-6 )   409 - 412   2003.12

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  • Luminescent properties of ZnCdSe/ZnMnSe superlattices Reviewed

    A. Fujita,A. Ota,K. Nakamura,Y. Nabetani,T. Kato他1名

    Materials Science in Semiconductor Processing   16 ( 5-6 )   457 - 460   2003.12

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  • Epitaxial growth and large band-gap bowing of ZnSeO alloy Reviewed

    Y. Nabetani,T. Mukawa,Y. Ito,T. Matsumoto

    Appl. Phys. Lett.   83 ( 6 )   1148 - 1150   2003.8

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  • Effect of oxygen on the electronic band structure in ZnOxSe1-x alloys Reviewed

    W. Shan,W. Walukiewicz,J.W. Ager III,K.M. Yu,J. Wu他5名

    Appl. Phys. Lett.   83 ( 2 )   299 - 301   2003.7

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  • Effect of oxygen on the electronic band structure in ZnOxSe1-x alloys Reviewed Major achievement

    W Shan, W Walukiewicz, JW Ager, KM Yu, J Wu, EE Haller, Y Nabetani, T Mukawa, Y Ito, T Matsumoto

    APPLIED PHYSICS LETTERS   83 ( 2 )   299 - 301   2003.7( ISSN:0003-6951  eISSN:1077-3118 )

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:AMER INST PHYSICS  

    The effect of alloying small amounts of ZnO with ZnSe on the electronic band structure has been studied. Optical transitions in molecular-beam-epitaxy-grown ZnOxSe1-x epitaxial films (0less than or equal toxless than or equal to1.35%) were investigated using photoreflectance and photoluminescence spectroscopies. The fundamental band-gap energy of the alloys was found to decrease at a rate of about 0.1 eV per atomic percent of oxygen. The pressure dependence of the band gap was also found to be strongly affected by O incorporation. Both the effects can be quantitatively explained by an anticrossing interaction between the extended states of the conduction band of ZnSe and the highly localized oxygen states located at approximately 0.22 eV above the conduction-band edge. (C) 2003 American Institute of Physics.

    DOI: 10.1063/1.1592885

    Web of Science

  • MBE growth and optical properties of ZnSeO Reviewed

    Y. Nabetani,T. Mukawa,Y. Ito,T. Kato,T. Matsumoto

    Proc. of 2002 MRS Fall Meeting   2002.12

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  • MBE growth of MnTe/ZnTe superlattices on GaAs(100) vicinal substrates Reviewed

    T. Suzuki,I. Ishibe,Y. Nabetani,T. Kato,T. Matsumoto

    J. Crystal Growth   237-239 ( 2 )   1374 - 1377   2002.4

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  • High resolution transmission electron microscope analysis of CdSe/ZnSe strained layer superlattices grown on InP Reviewed Major achievement

    Y. Nabetani,Y. Kobayashi,T. Kato,T. Matsumoto

    phys. stat. sol.(b)   229 ( 1 )   209 - 212   2002.4

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  • HRTEM observationof CdSe/ZnSe SQWs grown on vicinal GaAs substrate Reviewed

    Y. Nabetani,Y. Kobayashi,T. Kato,T. Matsumoto

    J. Crystal Growth   237-239 ( 2 )   1541 - 1544   2002.4

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  • Structural properties of Cu(Ga1-xInx)ySz bulk alloys Reviewed

    T. Kato,S. Hayashi,T. Kiuchi,Y. Ishihara,Y. Nabetani他1名

    J. Crystal Growth   237-239 ( 2 )   2005 - 2008   2002.4

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  • Arrangement of atoms and strain distribution in CdSe/ZnSe strained single quantum well on vicinal GaAs substrate Reviewed Major achievement

    Y. Nabetani,T. Kato,T. Matsumoto

    J. Appl. Phys.   89 ( 1 )   154 - 159   2001.1

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  • Arrangement of atoms and strain distribution in CdSe/ZnSe strained single quantum well on vicinal GaAs substrate

    Y Nabetani, T Kato, T Matsumoto

    JOURNAL OF APPLIED PHYSICS   89 ( 1 )   154 - 159   2001.1( ISSN:0021-8979 )

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    Strain distribution in a ZnSe/CdSe/ZnSe strained single quantum well structure grown on a vicinal GaAs substrate is investigated by calculating the positions of all the atoms in the structure. The strain distribution around atomic step edges is inhomogeneous, while that in terrace regions is the same as that of quantum wells grown on just-oriented substrates. The inhomogeneity extends for only 2 or 3 ML along the vicinal direction from the step edge. Microscopic lattice-planetilting of CdSe and ZnSe epitaxial layers becomes the largest at the step edge. CdSe expands and ZnSe shrinks in the growth plane at the lateral interface of CdSe and ZnSe to minimize the total strain energy. Cd atoms at the step edge have the largest strain energy due to shear deformation. Conduction and valence band potential profiles calculated by using the strain distribution and deformation potentials are found to enhance carrier confinement into the terrace region of the quantum well, although the confinement effect is not enough to explain the experimentally observed blueshift in photoluminescence. (C) 2001 American Institute of Physics.

    DOI: 10.1063/1.1329349

    Web of Science

  • Optical investigation of critical thickness and interface fluctuation in CdSe/ZnSe strained layer superlattices grown on InP Reviewed Major achievement

    Y. Nabetani,I. Ishibe,K. Sugiyama,T. Kato,T. Matsumoto

    Jpn. J. Appl. Phys.   39 ( 5 )   2541 - 2545   2000.5

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  • X-ray diffraction and photoreflectance study of CuGaSe2 epitaxial layers Reviewed

    M. Tanaka,T. Kodama,Y. Nabetani,T. Kato,T. Matsumoto

    Jpn. J. Appl. Phys.   39-1   203 - 204   2000.1

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  • Epitaxial growth of ZnSe films on CuGaSe2 films Reviewed

    M. Tanaka,Y. Nabetani,T. Kato,T. Matsumoto

    Jpn. J. Appl. Phys.   39-1   218 - 219   2000.1

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  • Change in alloy composition in Cu(Ga1-xInx)ySz after CuI or Cu2S annealing Reviewed

    T. Kato,Y. Ishinara,Y. Nabetani,T. Matsumoto

    Jpn. J. Appl. Phys.   39-1   81 - 82   2000.1

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  • Change in Alloy Composition in Cu(Ga1-xInx)(y)S-z after CuI or Cu2S Annealing Reviewed

    Takamasa Kato, Yujiro Ishihara, Yoichi Nabetani, Takashi Matsumoto

    JAPANESE JOURNAL OF APPLIED PHYSICS   39 ( 1 )   81 - 82   2000( ISSN:0021-4922  eISSN:1347-4065 )

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOP PUBLISHING LTD  

    We investigated the effect of heat treatment on Cu(Gal-xInx)(y)S-z (1<y<5) bulk crystals under Cu vapor atmosphere. The alloy compositions of as-grown crystal surfaces changed into CuGa1-x,In-x,S-2 after CuI heat treatment. The crystal structures also changed to the chalcopyrite from OVC (ordered vacancy compound) or hexagonal structures. Similar changes in the alloy compositions were observed after Cu2S heat treatment for crystals with as-grown alloy compositions of 1<y<3. However, as-grown crystals with compositions of 3<y<5 showed only small changes in alloy composition toward Cu(Ga,In)(3)S-5.

    Web of Science

  • Lateral potential modulation by strain distribution in single quantum well grown on vicinal substrate: an approach to low dimensional quantum structure Reviewed

    Y. Nabetani, T. Kato, and T. Matsumoto

    Proc. of 2nd International Symposium on Blue Laser and Light Emitting Diodes   480 - 483   1998.9

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  • Optical properties of CdSe/ZnSe strained layer superlattices grown on InP Reviewed

    Y. Nabetani,T. Kato,T. Matsumoto

    Proc. of 2nd International Symposium on Blue Laser and Light Emitting Diodes   238 - 241   1998.9

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  • CdSe/ZnSe strained layer superlattices grown on InP Reviewed Major achievement

    Y Nabetani, H Takahashi, T Kato, T Matsumoto

    JOURNAL OF CRYSTAL GROWTH   184 ( 185/ )   26 - 30   1998.2( ISSN:0022-0248 )

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:ELSEVIER SCIENCE BV  

    ZnCdSe alloy and CdSe/ZnSe strained layer superlattices were grown on InP substrates by molecular beam epitaxy. We could reduce the substrate temperature during surface cleaning by the use of(NH4)(2)S-x treatment after etching, which prevented P desorption. Photoluminescence measurements at 16 K showed strong emission from ZnCdSe grown with the (NH4)(2)S-x treatment. CdSen/ZnSen superlattices were grown with n = 2-10. Structural characterization by X-ray diffraction measurements revealed well-defined satellite peaks. The diffraction patterns corresponding to CdSe and ZnSe lattice spacings were observed as envelopes of satellite peaks. Near band edge and deep-defect related emissions were seen in photoluminescence. The peak energy shifted with changing superlattice period. (C) 1998 Elsevier Science B.V. All rights reserved.

    Web of Science

  • Iodide MBE of CuGaSe2 on GaAs(100) substrates Reviewed

    T. Kodama,Y. Nabetani,T. Kato,T. Matsumoto,Ueng Herng-Yih

    Institute of Physics Conference Series   152   273 - 276   1998.1

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  • Growth of Cu-(Ga,In)-S system using temperature difference method under controlled S vapor pressure Reviewed

    T. Kato,T. Kiuchi,T. Matsumoto,Y. Nabetani

    Institute of Physics Conference Series   152   15 - 18   1998.1

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  • Structure and PL properties of CdSe/ZnSe single quantum wells grown on vicinal GaAs substrates Reviewed

    Y. Nabetani,H. Abe,H. Takano,T. Kato,T. Matsumoto

    Nonlinear Optics   78 ( 2-4 )   129 - 132   1997.8

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  • Critical thickness of InAs grown on misoriented GaAs substrates Reviewed

    Y. Nabetani,A. Wakahara,A. Sasaki

    J. Appl. Phys.   78 ( 11 )   6461 - 6468   1995.12

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  • Photoluminescence properties of AlGaP superlattices Reviewed Major achievement

    Y. Nabetani,A. Wakahara,A. Sasaki

    Mat. Sci. Eng. B   35 ( 1 )   454 - 458   1995.12

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  • Critical thickness of InAs grown on misoriented GaAs substrates Major achievement

    Y. Nabetani, A. Wakahara, A. Sasaki

    J. Appl. Phys.   78 ( 11 )   6461 - 6468   1995( ISSN:0021-8979 )

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    DOI: 10.1063/1.360531

  • 格子不整合系半導体層のヘテロエピタキシー機構 -InAs/GaAsとGe/Si- Reviewed

    佐々木昭夫,若原昭浩,鍋谷暢一

    日本結晶成長学会誌   21 ( 5 )   S345 - S352   1994.10

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  • Initial growth stage and optical properties of three- dimensional InAs structures on GaAs Reviewed Major achievement

    Y. Nabetani,T. Ishikawa,S. Noda,A. Sasaki

    J. Appl. Phys.   76 ( 1 )   347 - 351   1994.7

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Presentations

  • プラズマ支援分子線堆積法によるフレキシブル基板上へのGZO透明導電膜の形成と評価(8)

    杉山 弘樹、水野 立揮、宮川 敦成、幅田 雅也、村中 司、鍋谷 暢一、松本 俊

    第83回応用物学会秋季学術講演会  2022.9  応用物理学会

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    Event date: 2022.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:東北大学 川内北キャンパス  

  • プラズマ支援分子線堆積法によるフレキシブル基板上へのGZO透明導電膜の形成と評価 (7)

    幅田雅也、佐野準之助、佐藤陽平、村中司、鍋谷暢一、松本俊

    第82回応用物学会秋季学術講演会  2021.9  応用物理学会

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:オンライン開催  

  • プラズマ支援分子線堆積法によるフレキシブル基板上へのGZO透明導電膜の形成と評価 (6)

    佐野準之助、佐藤陽平、井出雄太、吉田千博、村中司、鍋谷暢一、松本俊

    第68回応用物学会春季学術講演会  2021.3  応用物理学会

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:オンライン開催  

  • Roll-to-Roll PAMBD法によるGZO透明導電膜の作製と評価

    水野立揮、杉山弘樹、村中司、鍋谷暢一、松本俊

    第70回応用物学会春季学術講演会  2021.3  応用物理学会

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    Event date: 2023.3

    Language:Japanese   Presentation type:Poster presentation  

    Venue:上智大学四谷キャンパス   Country:Japan  

  • プラズマ支援分子線堆積法によるフレキシブル基板上へのGZO透明導電膜の形成と評価 (5)

    佐藤陽平、中田耕輔、宮下周大、村中司、鍋谷暢一、松本俊

    第81回応用物学会秋季学術講演会  2020.9  応用物理学会

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    Event date: 2020.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:オンライン開催  

  • プラズマ支援分子線堆積法によるフレキシブル基板上へのGZO透明導電膜の形成と評価 (4)

    村中 司、山崎 知夢、佐藤 陽平、中田 耕輔、鍋谷 暢一、松本 俊

    第67回応用物学会春季学術講演会  2020.3  応用物理学会

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    Event date: 2020.3

    Language:Japanese   Presentation type:Poster presentation  

    Venue:上智大学四谷キャンパス  

  • ロール・ツー・ロール方式によるGZO透明導電膜のプラズマ支援堆積 (2)

    村中 司、土屋 雄平、青木 泰雅、小野島 紀夫、鍋谷 暢一、松本 俊、平木 哲、木島 一広、中村 卓、阿部 治、河野 裕、萩原 茂

    第80回応用物学会秋季学術講演会  2019.9  応用物理学会

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    Event date: 2019.9

    Language:Japanese   Presentation type:Other  

    Venue:北海道大学札幌キャンパス  

  • プラズマ支援分子線堆積法によるフレキシブル基板上へのGZO透明導電膜の形成と評価 (3)

    村中 司、小野 裕俊、寺田 佳史、渡辺 三志郎、鍋谷 暢一、松本 俊

    第66回応用物学会春季学術講演会  2019.3  応用物理学会

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    Event date: 2019.3

    Language:Japanese   Presentation type:Other  

    Venue:東京工業大学大岡山キャンパス  

  • ロール・ツー・ロール方式によるGZO透明導電膜のプラズマ支援堆積

    村中 司、 土屋 雄平、 榊原 守章、 小野島 紀夫、 鍋谷 暢一、 松本 俊、 平木 哲、 河野 裕、 木島 一広、 吉村 千秋、 萩原 茂

    第65回応用物理学会春季学術講演会  2018.3  応用物理学会

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    Event date: 2018.3

    Language:Japanese   Presentation type:Other  

    Venue:早稲田大学西早稲田キャンパス  

  • プラズマ支援分子線堆積法によるフレキシブル基板上へのGZO透明導電膜の形成と評価 (2)

    村中 司、 中山 智矢、 中島 伸、 岡島 康介、 鍋谷 暢一、 松本 俊

    第64回応用物理学会春季学術講演会  2017.3  応用物理学会

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    Event date: 2017.3

    Language:Japanese   Presentation type:Other  

    Venue:パシフィコ横浜  

  • Strain Energy Calculations of ZnTe1-xOx Crystal Using VFF Model for Intermediate Band Solar Cell International conference

    M. Bodiul Islam and Yoichi Nabetani

    20th International Conference on Ternary and Multinary Compounds  2016.9 

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    Event date: 2016.9

    Language:English   Presentation type:Oral presentation(general)  

    Venue:Hale(Saale), Germany  

  • 大面積PC基板上に形成したGZO透明導電膜の構造および特性評価

    岡島康介,村中司,鍋谷暢一,松本俊,平木哲

    応用物理学会 結晶工学分科会主催第4回結晶工学未来塾  2015.10  応用物理学会結晶工学分科会

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    Event date: 2015.10

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:東京農工大学  

  • ZnTeO混晶のエピタキシャル成長と構造および光学特性評価

    坂本宏貴,神田将平,鍋谷暢一,村中司

    応用物理学会 結晶工学分科会主催第4回結晶工学未来塾  2015.10  応用物理学会結晶工学分科会

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    Event date: 2015.10

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:東京農工大学  

  • ZnTeO太陽電池に向けたZnO/ZnTeヘテロ接合の作製

    笠井遼太郎,大石将平,鍋谷暢一,村中司

    応用物理学会 結晶工学分科会主催第4回結晶工学未来塾  2015.10  応用物理学会結晶工学分科会

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    Event date: 2015.10

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:東京農工大学  

  • ZnTeのn型層および電極の作製と電気的特性の評価

    鎌矢祐紀,張振宇,鍋谷暢一,村中司

    応用物理学会 結晶工学分科会主催第4回結晶工学未来塾  2015.10  応用物理学会結晶工学分科会

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    Event date: 2015.10

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:東京農工大学  

  • アニール処理したZnO-TFTの電流DLTS評価

    若林岳,池内達紀,佐々木涼介,村中司,鍋谷暢一,松本俊

    応用物理学会 結晶工学分科会主催第4回結晶工学未来塾  2015.10  応用物理学会結晶工学分科会

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    Event date: 2015.10

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:東京農工大学  

  • Hoppinig exciton model of pohotoluminescence in ZnSeO alloy

    The 17th International Conference on II-VI Compounds and Related Materials  2015.9 

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    Event date: 2015.9

    Language:English   Presentation type:Other  

  • Structural, Electrical and Optical Properties of Ga-Doped ZnO Films Grown on Flexible Substrates by Using Plasma-assisted Molecular Beam Deposition

    The 17th International Conference on II-VI Compounds and Related Materials  2015.9 

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    Event date: 2015.9

    Language:English   Presentation type:Other  

  • 大面積PC基板上へのGZO透明導電膜の形成

    高所健太,岡島康介,宮下祐二,村中司,鍋谷暢一,松本俊,平木哲,岩本禎雄,阪本慎吾

    応用物理学会 結晶工学分科会主催第2回結晶工学未来塾  2013.11  応用物理学会結晶工学分科会

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    Event date: 2013.11

    Language:Japanese   Presentation type:Other  

    Venue:学習院大学  

  • GaおよびN添加ZnO薄膜の形成と電気的評価

    小柳津祥典,中島紳,堀井貴大,佐野志保,村中司,鍋谷暢一,松本俊,平木哲,岩本禎雄,阪本慎吾

    応用物理学会 結晶工学分科会主催第2回結晶工学未来塾  2013.11  応用物理学会結晶工学分科会

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    Event date: 2013.11

    Language:Japanese   Presentation type:Other  

    Venue:学習院大学  

  • 光照射DLTS法によるZnTeOの局在準位評価

    坪谷直樹,,日向淳一,,鍋谷暢一,,村中 司,,松本 俊

    第74回応用物理学会学術講演会  2013.9  応用物理学会

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    Event date: 2013.9

    Language:Japanese   Presentation type:Other  

    Venue:同志社大学  

  • Energy Relaxation Process in Exciton Transfer between ZnCdMnSe and ZnCdSe Quantum Wells

    The 16th International Conference on II-VI Compounds and Related Materials  2013.9 

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    Language:English   Presentation type:Other  

  • Characterization of ZnTe and ZnTeO Alloy by DLTS

    The 16th International Conference on II-VI Compounds and Related Materials  2013.9 

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    Event date: 2013.9

    Language:English   Presentation type:Other  

  • Selective MBE Growth of ZnSe-based Nanostructures on Mesa-patterned GaAs Substrate

    The 16th International Conference on II-VI Compounds and Related Materials  2013.9 

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    Event date: 2013.9

    Language:English   Presentation type:Other  

  • Photocurrent Property of ZnTeO Layer

    The 16th International Conference on II-VI Compounds and Related Materials  2013.9 

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    Event date: 2013.9

    Language:English   Presentation type:Other  

  • Al diffusion into ZnTeO Alloy for n-type conductivity

    2013.7 

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    Event date: 2013.7

    Language:Japanese   Presentation type:Other  

  • ZnO TFTのドレイン電流DLTS測定 (3)

    久保田優人,若林岳,小柳津祥典,森雄大,村中司,鍋谷暢一,松本俊

    第61回応用物理学会春季学術講演会  2013.3  応用物理学会

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    Event date: 2013.3

    Language:Japanese   Presentation type:Other  

    Venue:青山学院大学  

  • ZnOを密着層として用いたガラス/Cu構造の密着性とナノ組織

    渡邉満洋,寺岡暁,鍋谷暢一,近藤英一

    日本機械学会関東支部第19期総会講演会  2013.3  日本機械学会

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:首都大学東京 南大沢キャンパス  

  • MBE法によるGaAs加工基板上ZnSeナノ構造の作製と評価

    浅野広樹,樋口晃裕,村中司,鍋谷暢一,松本俊

    応用物理学会 結晶工学分科会主催第1回結晶工学未来塾  2012.11  応用物理学会結晶工学分科会

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    Event date: 2012.11

    Language:Japanese   Presentation type:Other  

    Venue:学習院大学  

  • 分子線エピタキシー法によるZnTeO混晶の成長と評価

    矢﨑寛貴,日向淳一,坪谷直樹,大瀬木恵太,平野淳史,鍋谷暢一,村中司,松本俊

    応用物理学会 結晶工学分科会主催第1回結晶工学未来塾  2012.11  応用物理学会結晶工学分科会

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    Event date: 2012.11

    Language:Japanese   Presentation type:Other  

    Venue:学習院大学  

  • Zn-TDを使用したZnOのMOVPE成長および評価

    加藤征己,堀田祐太,鍋谷暢一,村中司,加藤孝正,松本俊

    応用物理学会 結晶工学分科会主催第1回結晶工学未来塾  2012.11  応用物理学会結晶工学分科会

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    Event date: 2012.11

    Language:Japanese   Presentation type:Other  

    Venue:学習院大学  

  • ZnO Adhesion Layer for Nanoprecision Electroless-Cu/glass Metallization

    Advanced Metallization Conference 2012: 22nd Asian Session  2012.10 

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    Event date: 2012.10

    Language:English   Presentation type:Other  

  • Al diffusion into ZnTeO alloy for n-type conductivity

    7th Interenational Conference on Molecular Beam Epitaxy  2012.9 

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    Event date: 2012.9

    Language:English   Presentation type:Other  

  • スピン偏極励起子の井戸間移動の外場による制御

    輿石 渓,,小仲修平,,岩崎文昭,,菱川正夫,,深澤左興,,村中 司,,鍋谷暢一,,松本 俊

    第73回応用物理学会学術講演会  2012.9  応用物理学会

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:愛媛大学/松山大学  

  • Spin-polarized exciton transfer in Zn-Cd-Mn-Se multi quantum wells

    18th International Conference on Ternary and Multinary Compounds  2012.8 

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    Event date: 2012.8

    Language:English   Presentation type:Other  

  • Al diffusion into ZnTeO Alloy for n-type conductivity

    31st Electronic Materials Symposium  2012.7 

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    Event date: 2012.7

    Language:Japanese   Presentation type:Other  

  • Formation of ultra-thin Al2O3 films for high-k gate dielectric applications by using atomic oxygen treatment

    31st Electronic Materials Symposium  2012.7 

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    Event date: 2012.7

    Language:Japanese   Presentation type:Other  

  • MOVPE growth of ZnO using Zn-TD as Zn source

    31st Electronic Materials Symposium  2012.7 

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    Event date: 2012.7

    Language:Japanese   Presentation type:Other  

  • 量子井戸局在励起子の多重井戸間移動

    岩崎文昭,菱川正夫,深澤左興,小仲修平,輿石 渓,川崎永人,村中 司,鍋谷暢一,松本 俊

    第59回応用物理学関係連合講演会  2012.3  応用物理学会

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:早稲田大学  

  • 局在準位を有する半導体ZnTeO混晶へのAlドーピング

    吉永大祐,鍋谷暢一,村中 司,松本 俊

    第59回応用物理学関係連合講演会  2012.3  応用物理学会

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    Event date: 2012.3

    Language:Japanese   Presentation type:Other  

    Venue:早稲田大学  

  • n-ZnO/p-ZnTeOヘテロ接合のバンド不連続解析

    鈴木貴博,三枝直樹,鍋谷暢一,村中 司,松本 俊

    第59回応用物理学関係連合講演会  2012.3  応用物理学会

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    Event date: 2012.3

    Language:Japanese   Presentation type:Other  

    Venue:早稲田大学  

  • ZnO TFTのドレイン電流DLTS測定

    森 雄大,久保田優人,佐野志保,堀井貴大,村中 司,鍋谷暢一,松本 俊

    第59回応用物理学関係連合講演会  2012.3  応用物理学会

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    Event date: 2012.3

    Language:Japanese   Presentation type:Other  

    Venue:早稲田大学  

  • PAD法による大面積基板上ZnO薄膜の特性

    宮下祐司,高所健太,水口慶一,佐野志保,堀井貴大,村中 司,鍋谷暢一,松本 俊,平木 哲,宮沢節也,深沢明広,阪本慎吾

    第59回応用物理学関係連合講演会  2012.3  応用物理学会

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    Event date: 2012.3

    Language:Japanese   Presentation type:Other  

    Venue:早稲田大学  

  • ZnO透明導電膜の光学的評価

    佐野志保,堀井貴大,小柳津祥典,村中 司,鍋谷暢一,松本 俊,平木 哲,宮沢節也,深沢明広,阪本慎吾

    第59回応用物理学関係連合講演会  2012.3  応用物理学会

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    Event date: 2012.3

    Language:Japanese   Presentation type:Other  

    Venue:早稲田大学  

  • 局在準位を有する半導体ZnTeO混晶へのAlドーピング

    吉永大祐,鍋谷暢一,村中司,松本俊

    応用物理学会 結晶工学分科会主催2011年・年末講演会  2011.12  結晶工学分科会

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    Event date: 2011.12

    Language:Japanese   Presentation type:Other  

    Venue:学習院大学  

  • n-ZnO/p-ZnTeOヘテロ接合のバンド不連続解析

    鈴木貴博,平松和也,三枝直樹,鍋谷暢一,村中司,松本俊

    応用物理学会 結晶工学分科会主催2011年・年末講演会  2011.12  結晶工学分科会

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    Event date: 2011.12

    Language:Japanese   Presentation type:Other  

    Venue:学習院大学  

  • ZnCdMnSe 系多重量子井戸局在励起子の井戸間移動

    岩崎文昭,菱川正夫,深澤左興,小仲修平,輿石渓,村中司,鍋谷暢一,松本俊

    多元系機能材料研究会 年末講演会  2011.12  多元系機能材料研究会

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    Event date: 2011.12

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:愛媛大学  

  • PAD 法による大面積PC 基板上ZnO 薄膜の特性

    宮下祐司,高所健太,水口慶一,村中司,鍋谷暢一,松本俊,平木哲,宮沢節也,深沢明広,坂本慎吾

    多元系機能材料研究会 年末講演会  2011.12  多元系機能研究会

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    Event date: 2011.12

    Language:Japanese   Presentation type:Other  

    Venue:愛媛大学  

  • GaドープZnO薄膜のラマン散乱

    佐野志保,,堀井貴大,,村中司,,鍋谷暢一,,松本俊,,平木哲,,宮沢節也,,深沢明広,,阪本慎吾,,河野裕,,木島一広,,安部治

    第72回応用物理学会学術講演会  2011.9  応用物理学会

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    Event date: 2011.9

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:山形大学  

  • 量子井戸局在励起子発光の励起スペクトル

    小仲修平,,岩崎文昭,,深澤左興,,菱川正夫,,輿石渓,,村中司,,鍋谷暢一,,松本俊

    第72回応用物理学会学術講演会  2011.9  応用物理学会

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    Event date: 2011.9

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:山形大学  

  • DQW局在スピン偏極励起子発光の動特性

    岩崎文昭,,菱川正夫,,深澤左興,,小仲修平,,輿石渓,,村中司,,鍋谷暢一,,松本俊

    第72回応用物理学会学術講演会  2011.9  応用物理学会

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    Event date: 2011.9

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:山形大学  

  • 非対称多重量子井戸構造の成長と評価

    輿石渓,,深澤左興,,菱川正夫,,岩崎文昭,,米山貴裕,,村中司,,鍋谷暢一,,松本俊

    第72回応用物理学会学術講演会  2011.9  応用物理学会

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    Event date: 2011.9

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:山形大学  

  • Nitrogen doping on ZnO films grown by plasma-assisted MBE and its effects to the transport properties of TFTs

    T. Muranaka, ,Y. Ushiyama, ,N. Marumo, ,T. Horii, ,S. Sano, ,K. Mizuguchi, ,Y. Sakurai,Y. Nabetani, ,T. Matsumoto

    15th International Conference on II-VI Compounds  2011.8 

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    Event date: 2011.8

    Language:English   Presentation type:Other  

  • Fabrication and characterization of size-controlled ZnSe nanostructures grown by selective MBE on mesa-patterned GaAs(001) substrates

    T. Muranaka,S. Iizuka, ,K. Sugimoto, ,S. Hada, ,Y. Nabetani, ,T. Matsumoto

    15th International Conference on II-VI Compounds  2011.8 

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    Event date: 2011.8

    Language:English   Presentation type:Other  

    Venue:Mayan, Mexico  

  • Structural and optical characters of ZnTeO alloys grown by MBE

    Y. Nabetani, ,K. Hiramatsu, ,N. Saegusa, ,T. Suzuki, ,D. Yoshinaga,T. Muranaka, ,T. Kato, ,T. Matsumoto

    15th International Conference on II-VI Compounds  2011.8 

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    Event date: 2011.8

    Language:English   Presentation type:Other  

  • MOVPE growth of ZnO using Zn-MOPD and Zn-TD as Zn source

    Y. Nabetani, ,T. Kobayashi, ,M. Kato, ,T. Muranaka, ,T. Kato,T. Matsumoto

    15th International Conference on II-VI Compounds  2011.8 

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    Event date: 2011.8

    Language:English   Presentation type:Other  

    Venue:Mayan, Mexico  

  • Exciton transfer between ZnCdMnSe and ZnCdSe quantum wells

    M. Hishikawa, ,S. Fukasawa, ,F. Iwasaki, ,K. Omori, ,K. Kodama, ,T. Muranaka, ,Y. Nabetani, ,T. Matsumoto

    15th International Conference on II-VI Compounds  2011.8 

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    Event date: 2011.8

    Language:English   Presentation type:Other  

  • MOVPE growth of ZnO using Zn-MOPD and Zn-TD as Zn source

    Y. Nabetani, ,T. Kobayashi, ,M. Kato, ,T. Muranaka, ,T. Matsumoto

    第30回電子材料シンポジウム  2011.7  第30回電子材料シンポジウム

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    Event date: 2011.7

    Language:Japanese   Presentation type:Other  

    Venue:ラフォーレ琵琶湖  

  • シャッター制御による混晶組成制御と多重量子井戸構造の作製

    深澤左興,菱川正夫,岩崎文昭,輿石渓,米山貴裕,村中司,鍋谷暢一,松本俊

    第58回応用物理学関係連合講演会  2011.3  応用物理学会

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:神奈川工科大学  

  • Zn-Cd-Mn-Se系DQWの光学的特性と構造評価(2)

    岩崎文昭,菱川正夫,深澤左興,米山貴裕,村中司,鍋谷暢一,松本俊

    第58回応用物理学関係連合講演会  2011.3  応用物理学会

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation(general)  

  • MBE成長したZnTeO混晶の構造および光学特性

    平松和也,鍋谷暢一,村中司,松本俊

    第58回応用物理学関係連合講演会  2011.3  応用物理学会

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:神奈川工科大学  

  • 局在準位を有する半導体ZnTeO 混晶の光導電性評価

    三枝直樹,鍋谷暢一,村中司,松本俊

    第58回応用物理学関係連合講演会  2011.3  応用物理学会

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:神奈川工科大学  

  • 結合DQW 構造におけるスピン偏極励起子発光の動特性

    菱川正夫,深澤左興,岩崎文昭,村中司,鍋谷暢一,松本俊

    第58回応用物理学関係連合後援会  2011.3  応用物理学会

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:神奈川工科大学  

  • Zn(C6H15O3)2をZn原料として用いたZnOのMOVPE成長

    小林哲也,加藤征己,鍋谷暢一,松本俊,村中司

    第58回応用物理学関係連合講演会  2011.3  応用物理学会

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    Event date: 2011.3

    Language:Japanese   Presentation type:Other  

    Venue:神奈川工科大学  

  • 局在準位を有する半導体ZnTeO混晶の光導電性評価

    三枝直樹,鍋谷暢一,村中司,松本俊

    結晶工学分科会2010年年末講演会  2010.12  応用物理学会結晶工学分科会

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    Event date: 2010.12

    Language:Japanese   Presentation type:Other  

    Venue:学習院大学  

  • Zn(C6H15O3)2をZn原料として用いたZnOのMOVPE成長と物性評価

    小林哲也,加藤征己,鍋谷暢一,村中司,松本俊

    結晶工学分科会2010年年末講演会  2010.12  応用物理学会結晶工学分科会

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    Event date: 2010.12

    Language:Japanese   Presentation type:Other  

    Venue:学習院大学  

  • MBE成長したZnTeO混晶の構造評価およびO組成の導出

    平松和也,鍋谷暢一,村中司,松本俊

    結晶工学分科会2010年年末講演会  2010.12  応用物理学会結晶工学分科会

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    Event date: 2010.12

    Language:Japanese   Presentation type:Other  

    Venue:学習院大学  

  • ZnO-TFT のI-V 特性と深い準位の測定

    榊原章剛,森雄大,佐野志保,堀井貴大,村中司,鍋谷暢一,松本俊

    2010年多元系機能材料研究会年末講演会  2010.11  多元系機能材料研究会

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    Event date: 2010.11

    Language:Japanese   Presentation type:Other  

    Venue:千葉工業大学  

  • ZnCdSe 系DQW における励起子トンネリングと励起子相互作用

    菱川正夫,深沢左興,岩崎文昭,村中司,鍋谷暢一,松本俊

    2010年多元系機能材料研究会年末講演会  2010.11  多元系機能材料研究会

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    Event date: 2010.11

    Language:Japanese   Presentation type:Other  

    Venue:千葉工業大学  

  • 原料交互供給によるZn-Cd-Mn-Se 系ナノ構造の作製と評価

    深沢左興,菱川正夫,岩崎文昭,村中司,鍋谷暢一,松本俊

    2010年多元系機能材料研究会年末講演会  2010.11  多元系機能材料研究会

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    Event date: 2010.11

    Language:Japanese   Presentation type:Other  

    Venue:千葉工業大学  

  • Optical and Structural Properties of Zn–Cd–Mn–Se Double Quantum Well Systems

    T. Matsumoto,K. Ohmori,K. Kodama,M. Hishikawa,S. Fukasawa,F. Iwasaki,T. Muranaka,Y. Nabetani

    17th International Conference on Ternary and Multinary Compounds  2010.9 

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    Event date: 2010.9

    Language:English   Presentation type:Other  

    Venue:Baku  

  • Effects of Ga Doping and Substrate Temperature on Electrical Properties of ZnO Transparent Conducting Films Grown by Plasma-Assisted Deposition

    T. Matsumoto,K. Mizuguchi,T. Horii,S. Sano,T. Muranaka,Y. Nabetani,S. Hiraki,H. Furukawa,A. Fukasawa,S. Sakamoto,S. Hagihara,H. Kono,K. Kijima,O. Abe,K. Yashiro

    17th International Conference on Ternary and Multinary Compounds  2010.9 

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    Event date: 2010.9

    Language:English   Presentation type:Other  

    Venue:Baku  

  • 低温成長GaドープZnO薄膜 (2) -X線回折特性-

    佐野志保,堀井貴大,村中司,鍋谷暢一,松本俊,平木哲,古川英明,深沢明広,坂本慎吾,萩原茂,河野裕,木島一広,安部治,八代浩二

    第71回応用物理学会学術講演会  2010.9  応用物理学会

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:長崎大学  

  • Zn-Cd-Mn-Se系DQWの光学的特性と構造評価

    岩崎文昭,菱川正夫,深沢左興,村中司,鍋谷暢一,松本俊

    第71回応用物理学会学術講演会  2010.9  応用物理学会

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:長崎大学  

  • 低温成長GaドープZnO薄膜 (1) -電気的特性-

    堀井貴大,佐野志保,村中司,鍋谷暢一,松本俊,平木哲,古川英明,深沢明広,阪本慎吾,萩原茂,河野裕,木島一広,安部治,八代浩二

    第71回応用物理学会学術講演会  2010.9  応用物理学会

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:長崎大学  

  • シャッター制御による混晶組成制御と多重量子井戸構造の作製

    深澤左興,菱川正夫,岩崎文昭,輿石渓,米山貴裕,村中司,鍋谷暢一,松本俊

    第58回応用物理学関係連合講演会  2010.3  応用物理学会

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    Event date: 2010.3

    Language:Japanese   Presentation type:Oral presentation(general)  

  • プラズマ支援堆積法によるZnO透明導電膜の低温成長

    水口慶一,宮下祐司,堀井貴大,佐野志保,榊原章剛,村中司,鍋谷暢一,松本俊,平木哲,古川英明,深沢明広,阪本慎吾,萩原茂,河野裕,木島一広,阿部治,八代浩二

    2009年「多元系機能材料研究会」年末講演会  2009.12  応用物理学会多元機能材料研究会

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    Event date: 2009.12

    Language:Japanese   Presentation type:Other  

    Venue:鷲山ハイランドホテル  

  • XRD characterization of ZnO layers grown on GaAs(111), sapphire c-plane and a-plane substrates by Plasma-Assisted MBE

    T. Muranaka,T. Sakano,T. Mizuguchi,Y. Nabetani,T. Akitsu,T. Matsumoto,S. Hagihara,O. Abe,S. Hiraki,Y. Fujikawa

    14th International Conference on II-VI Compounds  2009.8 

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    Event date: 2009.8

    Language:English   Presentation type:Other  

    Venue:St. Petersburg  

  • MOVPE growth of ZnO using Zn(C9H15O3)2 as a Zn source

    Y. Nabetani,Y. Hatanaka,T. Kobayashi,T. Muranaka,T. Kato,T. Matsumoto

    14th International Conference on II-VI Compounds  2009.8 

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    Event date: 2009.8

    Language:English   Presentation type:Other  

    Venue:St. Petersberg  

  • Epitaxial growth and characterization of ZnSTeO quaternary alloys

    Y. Nabetani,K. Gemma,T. Muranaka,T. kato,T. Matsumoto

    14th International Conference on II-VI Compounds  2009.8 

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    Event date: 2009.8

    Language:English   Presentation type:Other  

    Venue:St. Petersburg  

  • Tunneling of spin polarized excitons in ZnCdSe and ZnCdMnSe coupled double quantum wells

    K. Ohmori,K. Kodama,T. Muranaka,Y. Nabetani,T. Matsumoto

    14th International Conference on II-VI Compounds  2009.8 

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    Event date: 2009.8

    Language:English   Presentation type:Other  

    Venue:St. Petersberg  

  • Photoluminescence in ZnSe-based diluted magnetic semiconductor quantum well wire structures formed by wet chemical etching

    T. Muranaka,S. Iizuka,K. Kodama,Y. Ohmori,Y. Nabetani,T. Matsumoto

    14th International Conference on II-VI Compounds  2009.8 

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    Event date: 2009.8

    Language:English   Presentation type:Other  

    Venue:St. Petersberg  

  • 結合の強さに依存したZn-Cd-Mn-Se系DQWの励起子トンネリング

    菱川正夫, 大森健太, 児玉和樹, 深澤左興, 村中司, 鍋谷暢一, 松本俊

    第56回応用物理学関係連合講演会  2009.3  応用物理学会

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    Event date: 2009.3

    Language:Japanese   Presentation type:Other  

    Venue:筑波大学  

  • GaAs加工基板上へのZnSe系量子ナノ構造のMBE成長

    村中司, 飯塚傑, 杉本一馬, 児玉和樹, 大森健太, 鍋谷暢一, 松本俊

    第56回応用物理学関係連合講演会  2009.3  応用

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    Event date: 2009.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:筑波大学  

  • 化学エッチングにより形成したZnSe系希薄磁性半導体細線アレイの光学特性

    飯塚傑, 杉本一馬, 児玉和樹, 大森健太, 村中司, 鍋谷暢一, 松本俊

    第56回応用物理学関係連合講演会  2009.3  応用

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    Event date: 2009.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:筑波大学  

  • Zn-Mn-Cd-Se系2重量子井戸の構造評価

    深澤左興, 菱川正夫, 児玉和樹, 大森健太, 村中司, 鍋谷暢一, 松本俊

    第56回応用物理学関係連合講演会  2009.3  応用物理学会

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    Event date: 2009.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:筑波大学  

  • Zn(C9H15O3)2を原料としたZnO のサファイア基板上へのMOVPE成長

    畠中郁夫, 小林哲也, 鍋谷暢一, 松本俊, 村中司

    年末講演会  2008.12  応用

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    Event date: 2008.12

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:学習院大学  

  • Zn-Cd-Mn-Se 系結合DQW構造の励起子トンネリング

    大森健太, 児玉和樹, 菱川正夫, 深澤左興, 村中司, 鍋谷暢一, 松本俊

    年末講演会  2008.11  応用物理学会多元系研究会

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    Event date: 2008.11

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:長岡技術科学大学  

  • プラズマ支援堆積法による大面積ZnO透明導電膜

    水口慶一, 秋山太幸, 原澤哲也, 榊原章剛, 村中司, 鍋谷暢一, 秋津哲也, 松本俊, 平木哲, 藤川雄一郎, 萩原茂, 河野裕, 木島一広, 阿部治, 八代浩二

    年末講演会  2008.11  応用物理学会

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    Event date: 2008.11

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:長岡技術科学大学  

  • MBE growth and magneto-optical properties of ZnCdSe-ZnMnSe wire systems

    Takashi Matsumoto, Kenta Omori, Kazuhito Nakamura, Tsutomu Muranaka, Yoichi Nabetani

    16th International Conference on Ternary and Multinary Compounds  2008.9 

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    Event date: 2008.9

    Language:English   Presentation type:Other  

    Venue:Technical University Berlin, Germany  

  • ZnSe系結合DQW構造のXRD

    児玉和樹, 大森健太, 深澤左興, 村中司, 鍋谷暢一, 松本俊

    第69回応用物理学会学術講演会  2008.9  応用物理学会

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    Event date: 2008.9

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:中部大学  

  • 磁性/非磁性結合DQWの井戸間相互作用

    大森健太, 児玉和樹, 村中司, 鍋谷暢一, 松本俊

    第69回応用物理学会学術講演会  2008.9  応用物理学会

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    Event date: 2008.9

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:中部大学  

  • Temperature Lowering Condition and Annealing Effects on MOCVD-Grown ZnO Using Zn-MOPD (Zn(C9H15O3)2)

    Ikuo Hatanaka, Yoichi Nabetani, Takashi Matsumoto, Takamasa Kato, Tsutomu Muranaka, Tooru Hirai

    27th Electronic Materials Symposium  2008.7 

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    Event date: 2008.7

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:ラフォーレ修善寺  

  • Growth and Characterization of Ga-Doped ZnO Thin Films by Plasma-Assisted Molecular Beam Deposition

    Tsutomu Muranaka, Tatsumi Sakano, Taku Uehara, Yoichi Nabetani, Tetsuya Akitsu, Takamasa Kato, Takashi Matsumoto, Shigeru Hagihara, Osamu Abe, Tetsu Hiraki, Yuichiro Fujikawa

    27th Electronic Materials Symposium  2008.7 

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    Event date: 2008.7

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:ラフォーレ修善寺  

  • 各種基板上にプラズマ支援MBE法で成長したZnOのXRD評価

    阪野竜巳, 水口慶一, 村中司, 松本俊, 鍋谷暢一, 秋津哲也, 加藤孝正, 萩原茂, 阿部治, 平木哲, 藤川雄一郎

    第55回応用物理学関係連合講演会  2008.3  応用物理学会

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    Event date: 2008.3

    Language:Japanese   Presentation type:Other  

    Venue:日本大学理工学部  

  • ZnSe系量子構造のXRD評価

    児玉和樹, 田島崇正, 大森健太, 中村和史, 村中司, 鍋谷暢一, 松本俊

    第55回応用物理学関係連合講演会  2008.3  応用物理学会

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    Event date: 2008.3

    Language:Japanese   Presentation type:Other  

    Venue:日本大学理工学部  

  • ZnTe基板上に成長したZnTeO混晶の熱処理

    鍋谷暢一, 佐々木章吾, 源馬和明, 村中司, 加藤孝正, 松本俊

    第55回応用物理学関係連合講演会  2008.3  応用物理学会

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    Event date: 2008.3

    Language:Japanese   Presentation type:Other  

    Venue:日本大学理工学部  

  • MBEによるZnOナノロッドの成長における成長温度依存性

    筒井弘樹, 武田雅矢, 鍋谷暢一, 松本俊, 加藤孝正, 村中司

    第55回応用物理学関係連合講演会  2008.3  応用物理学会

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    Event date: 2008.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:日本大学理工学部  

  • ZnSTeO混晶のエピタキシャル成長とSによるO組成および局在準位の影響

    源馬和明, 鍋谷暢一, 村中司, 加藤孝正, 松本俊

    第55回応用物理学関係連合講演会  2008.3  応用物理学会

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    Event date: 2008.3

    Language:Japanese   Presentation type:Other  

    Venue:日本大学理工学部  

  • プラズマ支援分子線堆積ZnO薄膜を用いたTFTの作製と評価(2)

    村中司, 水口慶一, 阪野竜巳, 鍋谷暢一, 秋津哲也, 加藤孝正, 松本俊, 萩原茂, 阿部治, 平木哲, 藤川雄一郎

    第55回応用物理学関係連合講演会  2008.3  応用物理学会

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    Event date: 2008.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:日本大学理工学部  

  • Zn-MOPD(Zn(C9H15O3)2)を用いたZnOのMOCVD成長における降温条件と熱処理の効果

    畠中郁夫, 鍋谷暢一, 松本俊, 加藤孝正, 村中司

    第55回応用物理学関係連合講演会  2008.3  応用物理学会

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    Event date: 2008.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:日本大学理工学部  

  • MBE法を用いたGaAs(111)B上へのZnOナノロッドの成長

    筒井弘樹, 武田雅矢, 鍋谷暢一, 松本俊, 加藤孝正, 村中司

    2007.12  応用物理学会結晶工学分科会

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    Event date: 2007.12

    Language:Japanese   Presentation type:Other  

    Venue:学習院大学  

  • Zn(C9H15O3)2を原料としたZnOのMOCVD成長

    畠中郁夫, 鍋谷暢一, 松本俊, 村中司, 加藤孝正

    2007.12  応用物理学会結晶工学分科会

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    Event date: 2007.12

    Language:Japanese   Presentation type:Other  

    Venue:学習院大学  

  • 分子線堆積法により成長したガラス基板上GZO薄膜の構造特性

    村中司, 阪野竜巳, 鍋谷暢一, 秋津哲也, 加藤孝正, 松本俊, 萩原茂, 阿部治, 平木哲, 藤川雄一郎

    2007.12  応用物理学会結晶工学分科会

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    Event date: 2007.12

    Language:Japanese   Presentation type:Other  

    Venue:学習院大学  

  • ZnO/ZnTe:Oヘテロ接合の作製と電気的光学的特性

    源馬和明, 佐々木章吾, 阪野竜巳, 鍋谷暢一, 村中司, 松本俊, 加藤孝正

    2007.12  応用

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    Event date: 2007.12

    Language:Japanese   Presentation type:Other  

    Venue:学習院大学  

  • Nitrogen-Doping and Photo-Induced Conductivity of Epitaxially Grown ZnTeO

    Y. Nabetani, K. Aoki, T. Nakada, K. Gemma, T. Muranaka, T. Kato, T. Matsumoto, T. Hirai

    2007.9  The Korean Physical Society

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    Event date: 2007.9

    Language:English   Presentation type:Other  

    Venue:The Shilla Jeju  

  • Magneto-Optical Properties of ZnMnSe-ZnSe-ZnCdSe Quantum Structures

    M. Ito, M. Tajima, K. Omori, T. Muranaka, Y. Nabetani, T. Kato, T. Matsumoto

    2007.9  The Korean Physical Society

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    Event date: 2007.9

    Language:English   Presentation type:Other  

    Venue:The Shilla Jeju  

  • Doping Profiles and Nanostructural Properties of Molecular Beam Deposited GZO Thin Films on Glass Substrates

    T. Muranaka, T. Uehara, T. Sakano, Y. Nabetani, T. Akitsu, T. Kato, T. Matsumoto, S. Hagihara, O. Abe, S. Hiraki, Y. Fujikawa

    2007.9  The Korean Physical Society

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    Event date: 2007.9

    Language:English   Presentation type:Oral presentation(general)  

    Venue:The Shilla Jeju  

  • Fabrication and Charactereization of TFTs Using Molecular Beam Deposited ZnO Films on SiO2/Si Substrates

    T. Muranaka, Y. Sakurai, T. Sakano, T. Uehara, Y. Nabetani, T. Akitsu, T. Kato, T. Matsumoto, S. Hagihara, O. Abe, S. Hiraki, Y. Fujikawa

    2007.9  The Korean Physical Society

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    Event date: 2007.9

    Language:English   Presentation type:Other  

    Venue:The Shilla Jeju  

  • Electrical and Optical Properties of Ga-Doped ZnO Films Grown by Plasma Assisted Deposition on Glass and Plastic Substrates

    T. Muranaka, A. Nishii, T. Uehara, T. Sakano, Y. Nabetani, T. Akitsu, T. Kato, T. Matsumoto, S. Hagihara, O. Abe, S. Hiraki, Y. Fujikawa

    2007.9  The Korean Physical Society

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    Event date: 2007.9

    Language:English   Presentation type:Other  

    Venue:The Shilla Jeju  

  • Photoluminescence and Optical Absorption of ZnTeO Epitaxial Alloys Grown on ZnTe Substrates

    Y. Nabetani, K. Gemma, K. Aoki, T. Muranaka, T. Kato, T. Matsumoto, T. Hirai

    2007.9  The Korean Physical Society

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    Event date: 2007.9

    Language:English   Presentation type:Oral presentation(general)  

    Venue:The Shilla Jeju  

  • Formation of ZnO Nanostructures on GaAs Substrates Using In Droplets

    Y. Nabetani, F. Ito, H. Tsutsui, T. Muranaka, T. Kato, T. Matsumoto, T. Hirai

    2007.9  The Korean Physical Society

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    Event date: 2007.9

    Language:English   Presentation type:Other  

    Venue:The Shilla Jeju  

  • Zn-MOPDを用いたガラス基板上へのZnOのMOCVD成長と評価

    畠中郁夫, 鍋谷暢一, 村中司, 加藤孝正, 松本俊

    第68回応用物理学会学術講演会  2007.9  応用物理学会

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    Event date: 2007.9

    Language:Japanese   Presentation type:Other  

    Venue:北海道  

  • プラズマ支援分子線堆積ZnO薄膜を用いたTFTの作製と評価

    村中司, 櫻井勇毅, 阪野竜巳, 鍋谷暢一, 秋津哲也, 加藤孝正, 松本俊, 萩原茂, 阿部治, 平木哲, 藤川雄一郎

    2007.9  応用物理学会

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    Event date: 2007.9

    Language:Japanese   Presentation type:Other  

    Venue:第68回応用物理学会学術講演会  

  • ZnO/ZnTe:Oヘテロ接合の作製と電気的特性

    源馬和明, 佐々木章吾, 阪野竜巳, 鍋谷暢一, 村中司, 加藤孝正, 松本俊

    第68回応用物理学会学術講演会  2007.9  応用物理学会

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    Event date: 2007.9

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:北海道工業大学  

  • ZnTe基板上に成長したZnTe:Oの高分解能X線回折

    鍋谷暢一, 源馬和明, 村中司, 加藤孝正, 松本俊

    第68回応用物理学会学術講演会  2007.9  応用物理学会

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    Event date: 2007.9

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:北海道工業大学  

  • Control of isoelectronic trap states and photoconductivity of ZnTe:O epitaxial layers

    Y. Nabetani, K. Aoki, K. Gemma, T. Nakada, T. Muranaka, T. Kato, T. Matsumoto, T. Hirai

    2007.7 

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    Event date: 2007.7

    Language:Japanese   Presentation type:Other  

    Venue:ラフォーレ琵琶湖  

  • Formation of ZnO nanostructures on GaAs substrates using In droplets

    Y. Nabetani, F. Ito, H. Tsutsui, T. Muranaka, T. Kato, T. matsumoto, T. Hirai

    第26回電子材料シンポジウム  2007.7 

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    Event date: 2007.7

    Language:Japanese   Presentation type:Other  

    Venue:ラフォーレ琵琶湖  

  • ZnTe:Oの酸素クラスターにより形成される局在準位の発光と光吸収

    源馬和明,青木和正,鍋谷暢一,村中司,加藤孝正,松本俊

    第54回応用物理学関係連合講演会  2007.3 

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    Event date: 2007.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:青山学院大学  

  • 分子線堆積法により成長したZnO薄膜の構造解析

    村中 司,植原琢,阪野竜巳,鍋谷暢一,秋津哲也,加藤孝正,松本俊,萩原茂,阿部治,平木哲,藤川雄一郎

    第54回応用物理学関係連合講演会  2007.3 

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    Event date: 2007.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:青山学院大学  

  • ZnCdSe/ZnSe量子井戸発光の偏光特性

    田島崇正,伊藤雅大,大森健太,児玉和樹,村中 司,鍋谷暢一,加藤孝正,松本俊

    第54回応用物理学関係連合講演会  2007.3 

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    Event date: 2007.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:青山学院大学  

  • 磁性/非磁性DQWの磁気PLの偏光特性

    伊藤雅大,田島崇正,大森健太,村中司,鍋谷暢一,加藤孝正,松本俊

    第54回応用物理学関係連合講演会  2007.3 

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    Event date: 2007.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:青山学院大学  

  • ZnTe:Oへの窒素ドープとその光学的、電気的特性評価

    青木和正,中田喬章,源馬和明,鍋谷暢一,村中司,加藤孝正,松本俊

    第54回応用物理学関係連合講演会  2007.3 

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    Event date: 2007.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:青山学院大学  

  • バンドギャップよりも小さいエネルギーの励起光を用いたZnTe:O のPhotoreflectance

    鍋谷暢一,青木和正,源馬和明,村中司,加藤孝正,松本俊

    第54回応用物理学関係連合講演会  2007.3 

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    Event date: 2007.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:青山学院大学  

  • Control of isoelectronic trap states and photoconductivity of ZnTe:O epitaxial layers International conference Major achievement

    2007 

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  • Optical properties of localized and band states in ZnTe:O

    Y. Nabetani, K. Aoki, K. Gemma, T. Kato, T. Matsumoto, and T. Hirai

    The 7th Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments  2006.11 

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    Event date: 2006.11

    Language:English   Presentation type:Other  

    Venue:奈良百年会館  

  • GaAs(001)基板上へのγ-In2Se3のMBE成長

    宇津木康史,高木 聡,大原 健,村中 司,鍋谷暢一,松本 俊,加藤孝正

    日本結晶成長学会誌(第36回結晶成長国内会議)  2006.11  日本結晶成長学会

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    Event date: 2006.11

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:大阪大学  

  • Inドロップレットを利用したGaAs基板上へのZnOナノ構造の成長

    伊東史佳,筒井弘樹,鍋谷暢一,村中司,加藤孝正,松本俊

    第67回応用物理学会学術講演会  2006.9 

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    Event date: 2006.9

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:立命館大学  

  • 透明導電性ZnO薄膜におけるGaドープ効果

    植原琢,阪野竜巳,村中司,鍋谷暢一,秋津哲也,加藤孝正,萩原茂,阿部治,平木哲,藤川雄一郎

    第67回応用物理学会学術講演会  2006.8 

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    Event date: 2006.8

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:立命館大学  

  • ZnTe基板上に成長したZnTe:Oの光吸収特性

    源馬和明,青き和正,鍋谷暢一,村中司,加藤孝正,松本俊

    第67回応用物理学会学術講演会  2006.8 

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    Event date: 2006.8

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:立命館大学  

  • ZnMnSe細線埋め込みZnCdSe/ZnSe SQWのPL特性

    伊藤雅大,田島崇正,村中 司,鍋谷暢一,加藤孝正,松本 俊

    第67回応用物理学会学術講演会  2006.8 

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    Event date: 2006.8

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:立命館大学  

  • Formation of Intermediate electronic band induced by oxygen isoelectornic trap in ZnTeO

    Y. Nabetani, K. Aoki, K. Gemma, T. Kato, T. Matsumoto, and T. Hirai

    第25回電子材料シンポジウム  2006.7 

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    Event date: 2006.7

    Language:Japanese   Presentation type:Other  

    Venue:サンバレー富士見  

  • Growth of ZnO nanorods on GaAs substrates by RF-MBE

    H. Tsutsui, F. Ito, Y. Nabetani, T. Kato, and T. Matsumoto

    第25回電子材料シンポジウム  2006.7 

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    Event date: 2006.7

    Language:Japanese   Presentation type:Other  

    Venue:サンバレー富士見  

  • ZnTe基板上へのZnTeO混晶の成長

    青木和正,源馬和明,鍋谷暢一,加藤孝正,松本俊

    第53回応用物理学関係連合講演会  2006.3 

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    Event date: 2006.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:武蔵工業大学  

  • Epitaxial Growth and Optical Investigation of ZnTeO Alloys

    Y. Nabetani,T. Okuno,K. Aoki,T. Kato,T. Matsumoto,T. Hirai

    15th International Conference on Ternary and Multinary Compounds  2006.3 

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    Event date: 2006.3

    Language:English   Presentation type:Oral presentation(general)  

    Venue:Ryukoku University  

  • Composition Control of ZnSSeO Quarternary Alloys Grown on GaP

    Y. Nabetani,Y. Ito,K. Kamisawa,T. Kato,T. Matsumoto,T. Hirai

    12th International Conference on II-VI Compounds  2005.9 

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    Event date: 2005.9

    Language:English   Presentation type:Oral presentation(general)  

    Venue:Warsaw  

  • Photoluminescence Properties of ZnTeO and ZnSeO Alloys with Dilute O Concentrations

    Y. Nabetani,T. Okuno,K. Aoki,T. Kato,T. Matsumoto,T. Hirai

    12th International Conference on II-VI Compounds  2005.9 

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    Event date: 2005.9

    Language:English   Presentation type:Oral presentation(general)  

    Venue:Warsaw  

  • Characterization of MBE Grown ZnO on GaAs(111) Substrates

    Takashi. Matsumoto,Kazuto Nishimura,Akito Nishii,Atsuya Ota,Yoichi Nabetani,Takamasa Kato

    12th International Conference on II-VI Compounds  2005.9 

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    Event date: 2005.9

    Language:English   Presentation type:Oral presentation(general)  

    Venue:Warsaw  

  • ZnO薄膜成長のin situ偏光解析

    西井昭人,植原琢,阪野竜巳,鍋谷暢一,秋津哲也他6名

    第66回応用物理学会学術講演会  2005.9 

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    Event date: 2005.9

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:徳島大学  

  • Optical Investigation og the band structure of ZnTeO Alloy

    Y. Nabetani,T. Okuno,K. Aoki,T. Hirai,T. Kato,T. Matsumoto

    第24回電子材料シンポジウム  2005.7 

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    Event date: 2005.7

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:メルパルク松山  

  • MBE法によるGaAs基板上へのZnTeO混晶の成長

    鍋谷暢一,奥野知弥,青木和正,松本俊

    II-VI Workshop 2005  2005.3 

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    Event date: 2005.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:登別  

  • Characterization of MBE Grown ZnO on GaAs(111) Substrates International conference Major achievement

    12th International Conference on II-VI Compounds  2005 

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  • Composition Control of ZnSSeO Quarternary Alloys Grown on GaP International conference Major achievement

    12th International Conference on II-VI Compounds  2005 

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    Language:English   Presentation type:Poster presentation  

  • Lattice Spacing and Bandgap Control of ZnOSSe Alloy

    Yoichi Nabetani,Yuichi Ito,Kazunobu Kamisawa,Takamasa Kato,Takashi Matsumoto

    The 3rd International Workshop on ZnO and Related Materials  2004.10 

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    Event date: 2004.10

    Language:English   Presentation type:Oral presentation(general)  

    Venue:Sendai Memorial Hall  

  • ZnSeにおけるO原子の局在準位

    鍋谷暢一,奥野知弥,加藤孝正,松本俊

    第65回応用物理学会学術講演会  2004.9 

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    Event date: 2004.9

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:東北学院大学  

  • GaAs(001)基板上へのGaSeのMBE成長とその表面形態

    岡辺佳子,沖秀太,鍋谷暢一,松本俊,加藤孝正

    第34回結晶成長国内会議  2004.8 

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    Event date: 2004.8

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:東京農工大学  

  • GaAs基板上へのZnOのプラズマMBE成長

    西井昭人,西村一人,鍋谷暢一,加藤孝正,松本俊

    第34回結晶成長国内会議  2004.8 

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    Event date: 2004.8

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:東京農工大学  

  • 高格子不整合4元混晶ZnSSeOにおけるⅥ族組成制御と歪エネルギー

    鍋谷暢一,伊東祐一,上澤一暢,加藤孝正,松本俊

    第34回結晶成長国内会議  2004.8 

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    Event date: 2004.8

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:東京農工大学  

  • Cap Layer Dependence of Strain States in InAs QD

    Y. Nabetani,T. Matsumoto,S. Ganapathy,I. Suemune

    第23回電子材料シンポジウム  2004.7 

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    Event date: 2004.7

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:伊豆長岡  

  • ZnSSeO四元混晶の組成制御性

    伊東祐一,上澤一暢,奥野知弥,鍋谷暢一,加藤孝正,松本俊

    第51回応用物理学関係連合講演会  2004.3 

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    Event date: 2004.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:東京工科大学  

  • ZnMnSeヘテロエピタキシャル膜の光学特性

    中村和史,藤田充紀,鍋谷暢一,加藤孝正,松本俊

    第51回応用物理学関係連合講演会  2004.3 

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    Event date: 2004.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:東京工科大学  

  • Cap Layer Dependence of Strain States in InAs QD Major achievement

    第23回電子材料シンポジウム  2004 

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    Language:Japanese  

  • ZnOのGaAs(111)基板上へのMBE成長とその特性

    西村一人,西井昭人,鍋谷暢一,加藤孝正,松本俊

    第64回応用物理学会学術講演会  2003.8 

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    Event date: 2003.8

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:福岡大学  

  • ZnSをS原料としたZnSSeO混晶のMBE成長

    伊東祐一,武川俊樹,奥野知弥,鍋谷暢一,加藤孝正,松本俊

    第50回応用物理学関係連合講演会  2003.3 

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    Event date: 2003.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:神奈川大学  

  • Theoretical Analysis of Microscopic Strain Distribution and Phase Stability of Zn Chalcogenide Alloys Using Valence Force Field Model

    Y. Ito,Y. Nabetani,T. Kato,T. Matsumoto

    1st International Symposium on Point Defect and Nonstoichiometry  2003.3 

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    Event date: 2003.3

    Language:English   Presentation type:Oral presentation(general)  

    Venue:Sendai Memorial Hall  

  • Structure and Optical Properties of ZnSeO Alloy

    Y. Nabetani,T. Mukawa,T. Okuno,Y. Ito,T. Kato,T. Matsumoto

    1st International Symposium on Point Defect and Nonstoichiometry  2003.3 

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    Event date: 2003.3

    Language:English   Presentation type:Oral presentation(general)  

    Venue:Sendai Memorial Hall  

  • Epitaxial Growth and Structural Stability of ZnSeO Alloy

    Y. Nabetani,T. Mukawa,T. Okuno,Y. Ito,T. Kato,T. Matsumoto

    First Asia-Pacific Workshop on Widegap Semiconductors  2003.3 

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    Event date: 2003.3

    Language:English   Presentation type:Oral presentation(general)  

    Venue:Awaji Yumebutai  

  • Plasma Assisted MBE Growth and Characterization of Hexagonal ZnO on GaAs (111) Substrates

    Takashi Matsumoto,Yoichi Nabetani,Chitoku Ando,Hirohito Kinno,Kazuto Nishimura他3名

    First Asia-Pacific Workshop on Widegap Semiconductors  2003.3 

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    Event date: 2003.3

    Language:English   Presentation type:Oral presentation(general)  

    Venue:Awaji Yumebutai  

  • InAs量子ドットの歪に与えるキャップ層の影響

    鍋谷暢一,松本俊,Sasikala Ganapathy,張希清,末宗幾夫

    第63回応用物理学会学術講演会  2002.9 

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    Event date: 2002.9

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:新潟大学  

  • 酸素組成の高いZnSeO混晶のMBE成長

    武川俊樹,伊東祐一,奥野知弥,鍋谷暢一,加藤孝正,松本俊

    第63回応用物理学会学術講演会  2002.9 

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    Event date: 2002.9

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:新潟大学  

  • MBE growth of ZnSeO alloy and its characterization

    Y. Nabetani,T. Mukawa,Y. Ito,T. Kato,T. Matsumoto

    第21回電子材料シンポジウム  2002.6 

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    Event date: 2002.6

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:伊豆長岡  

  • ZnSeO混晶のMBE成長とその評価

    鍋谷暢一,武川俊樹,伊東祐一,加藤孝正,松本俊

    第49回応用物理学関係連合講演会  2002.3 

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    Event date: 2002.3

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:日本大学  

  • InP基板上に成長したCdSeZnSe歪超格子の断面TEMによる歪分布解析

    小林祐子,鍋谷暢一,加藤孝正,松本俊

    第62回応用物理学会学術講演会  2001.9 

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    Event date: 2001.9

    Language:Japanese   Presentation type:Oral presentation(general)  

    Venue:愛知工業大学  

  • High resolution transmission electron microscope analysis of CdSe/ZnSe strained layer superlattices grown on InP

    Y. Nabetani,Y. Kobayashi,T. Kato,T. Matsumoto

    10th International Conferenceon II-VI Compounds  2001.9 

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    Event date: 2001.9

    Language:English   Presentation type:Oral presentation(general)  

    Venue:UNIVersum Convention Center, Bremen  

  • MBE Growth and magneto-photoluminescence properties of ZnSe based quantum structures including diluted magnetic semiconductors

    T. Matsumoto,T. Suzuki,A. Fujita,Y. Nabetani,T. Kato

    10th International Conferenceon II-VI Compounds  2001.9 

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    Event date: 2001.9

    Language:English   Presentation type:Oral presentation(general)  

    Venue:UNIVersum Convention Center, Bremen  

  • HRTEM Observation of CdSe/ZnSe SQW Grown on Vicinal GaAs Substrate

    Y. Nabetani,Y. Kobayashi,Y. Ito,T. Kato,T. Matsumoto

    13th International Conference on Crystal Growth / 11th International Conference on Vapor Growth and Epitaxy  2001.8 

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    Event date: 2001.8

    Language:English   Presentation type:Oral presentation(general)  

    Venue:同志社大学  

  • Structural Properties of Cu(Ga1-xInx)ySz Bulk Alloys

    T. Kato,S. Hayashi,T. Kiuchi,Y. Ishihara,Y. Nabetani,T. Matsumoto

    13th International Conference on Crystal Growth / 11th International Conference on Vapor Growth and Epitaxy  2001.8 

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    Event date: 2001.8

    Language:English   Presentation type:Oral presentation(general)  

    Venue:同志社大学  

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The total number of announcement other than the above

  • 2006

    Total number of non-preannounced events:2  Number of main presenters:2  Number of presenters other than main person:0

  • 2005

    Total number of non-preannounced events:4  Number of main presenters:1  Number of presenters other than main person:3

  • 2004

    Total number of non-preannounced events:3  Number of main presenters:1  Number of presenters other than main person:2

  • 2003

    Total number of non-preannounced events:6  Number of main presenters:1  Number of presenters other than main person:5

  • 2002

    Total number of non-preannounced events:4  Number of main presenters:2  Number of presenters other than main person:2

  • 2001

    Total number of non-preannounced events:3  Number of main presenters:0  Number of presenters other than main person:3

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Industrial Property Rights

  • 光半導体素子

    鍋谷暢一

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    Applicant:株式会社山梨ティー・エル・オー

    Application no:2002-252430  Date applied:2002.8

    Country of applicant:Domestic  

Awards

  • 研究特別奨励賞

    2008.6   山梨大学  

    鍋谷暢一

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    平成18年度に教育研究等で優れた業績

  • 研究特別奨励賞

    2008  

  • 矢崎学術賞(奨励賞)

    2007.3   矢崎科学技術振興記念財団  

    鍋谷暢一

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    ZnSeO混晶のバンドギャップ制御とその光デバイスへの応用

  • 矢崎学術賞(奨励賞)

    2007  

  • 第3回応用物理学会講演奨励賞

    1997.1  

  • 第3回応用物理学会講演奨励賞

    1997  

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Teaching Experience (On-campus)

  • Basic Chemistry for Electronic Engineering

    2023Year

Guidance results

  • 2020

    Type:Ph.D. dissertations guidance

    Number of people receiving guidance :3people 

  • 2018

    Type:Undergraduate (Major A course)graduation thesis guidance

    Number of people receiving guidance :3people 

  • 2018

    Type:Ph.D. dissertations guidance

    Number of people receiving guidance :2people 

  • 2017

    Type:Undergraduate (Major A course)graduation thesis guidance

    Number of people receiving guidance :3people 

  • 2016

    Type:Undergraduate (Major A course)graduation thesis guidance

    Number of people receiving guidance :3people 

Other educational achievements

  • 杭州電子科技大DDプログラム

    2023

Review of master's and doctoral thesis

  • 2023

    Examiner classification:Second reader

    Master :4people 

    Doctoral :1people 

Professional Memberships

  • 応用物理学会

  • 日本結晶成長学会

  • 日本結晶成長学会

  • 応用物理学会